MAGNESIUM DOPING IN BARRIERS IN MULTIPLE QUANTUM WELL STRUCTURES OF III-NITRIDE-BASED LIGHT EMITTING DEVICES

• US 20120107991A1
• Filed: 10/21/2011
• Published: 05/03/2012
• Est. Priority Date: 10/21/2010
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Huang, Chia-Yen, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.
• Application Number:
  US13/279,121
• Publication Number:
  US 20120107991A1
• Time in Patent Office: Days
• US Class Current: 438/47
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/3063 using Mg
• CPC Class Codes: H01S 5/309 doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure barriers in quantum wells per se H01S5/3407
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing a bis(cyclopentadienyl)magnesium (Cp₂Mg) flow during growth of the barrier using metalorganic chemical vapor deposition (MOCVD). The barriers of the MQW structure may be undoped, fully Mg-doped or partially Mg-doped. When the barrier is partially Mg-doped, only portions of the barrier are Mg-doped to prevent Mg diffusion into quantum wells of the MQW structure. The Mg-doped barriers preferably are high Al composition AlGaN barriers in nonpolar or semipolar devices.

Claims

1. A method for fabricating an optoelectronic device, comprising:

fabricating a III-nitride-based light emitting device having a multiple quantum well (MQW) structure, wherein at least one barrier in the MQW structure is doped with magnesium (Mg).

2. The method of claim 1, wherein the fabricating step further comprises introducing a bis(cyclopentadienyl)magnesium (Cp₂Mg) flow during growth of one or more of the barriers, in order to dope the barrier with Mg.

3. The method of claim 2, wherein the growth is performed using metal organic chemical vapor deposition (MOCVD).

4. The method of claim 1, wherein the barrier is fully Mg-doped.

5. The method of claim 1, wherein the barrier is partially Mg-doped, such that only portions of the barrier are Mg-doped, to prevent Mg diffusion into quantum wells of the MQW structure.

6. The method of claim 1, wherein the barrier is a multilayer structure of different compositions or a structure with a graded composition.

7. The method of claim 6, wherein the barrier has a composition comprising Al_xIn_yGa_1-x-yN, where 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1.

8. The method of claim 1, wherein the III-nitride-based light emitting device is a polar, nonpolar or semipolar device.

9. The method of claim 1, wherein the III-nitride-based light emitting device is a light emitting diode (LED), laser diode (LD) or superluminescent diode (SLD).

10. A device fabricated using the method of claim 1.

11. An optoelectronic device, comprising:

a III-nitride-based light emitting device having a multiple quantum well (MQW) structure, wherein at least one barrier in the MQW structure is doped with magnesium (Mg).

12. The device of claim 11, wherein a bis(cyclopentadienyl)magnesium (Cp₂Mg) flow is introduced during growth of one or more of the barriers, in order to dope the barrier with Mg.

13. The device of claim 12, wherein the growth is performed using metal organic chemical vapor deposition (MOCVD).

14. The device of claim 11, wherein the barrier is fully Mg-doped.

15. The device of claim 11, wherein the barrier is partially Mg-doped, such that only portions of the barrier are Mg-doped, to prevent Mg diffusion into quantum wells of the MQW structure.

16. The device of claim 11, wherein the barrier is a multilayer structure of different compositions or a structure with a graded composition.

17. The device of claim 16, wherein the barrier has a composition comprising Al_xIn_yGa_1-x-yN, where 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1.

18. The device of claim 11, wherein the III-nitride-based light emitting device is a polar, nonpolar or semipolar device.

19. The device of claim 11, wherein the III-nitride-based light emitting device is a light emitting diode (LED), laser diode (LD) or superluminescent diode (SLD).