Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making

• US 20120108079A1
• Filed: 07/28/2011
• Published: 05/03/2012
• Est. Priority Date: 10/29/2010
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Mahajani, Maitreyee
• Application Number:
  US13/192,993
• Publication Number:
  US 20120108079A1
• Time in Patent Office: Days
• US Class Current: 438/788
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma

Abstract

Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process. The substrate is then exposed sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species sufficient to form at least a partial layer of one or more of silicon nitride or silicon on the substrate during a second atomic layer deposition process. The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film.

Claims

1. A method for forming a film on a substrate, the film having a refractive index and an absorption coefficient, the method comprising:

exposing the substrate sequentially to a first reactant gas comprising a first species including one or more of silicon, oxygen and nitrogen and a second reactant gas comprising a second species to form a first partial layer on the substrate during a first atomic layer deposition process;

exposing the substrate sequentially to a third reactant gas comprising a third species including one or more of silicon, oxygen and nitrogen and a fourth reactant gas comprising a fourth species to form a second partial layer on the substrate during a second atomic layer deposition process; and

repeating sequentially the first atomic layer deposition process and the second atomic layer deposition process to form a mixed film comprising the first partial layer and the second partial layer,

wherein one or more of the refractive index and the absorption coefficient can be altered by changing a ratio of the first partial layer to the second partial layer.

2. The method of claim 1, wherein either the first atomic layer deposition process or the second atomic layer deposition process occurs first.

3. The method of claim 1, wherein the mixed film comprises silicon oxide and silicon nitride and the refractive index of the mixed silicon oxide/silicon nitride film is in a range of about 1.6 to about 1.7.

4. The method of claim 1, wherein the first species comprises one or more of silane, disilane and a halide of silane.

5. The method of claim 1, wherein the second species comprises water.

6. The method of claim 1, wherein the third species comprises one or more of silane, disilane and a halide of silane.

7. The method of claim 6, wherein the fourth species comprises one or more of nitrogen and a reducing agent or oxidizing agent sufficient to form silicon.

8. The method of claim 7, wherein the nitrogen is a plasma.

9. The method of claim 8, wherein the second atomic layer deposition process is performed in a process chamber and the plasma is generated remotely from the process chamber.

10. The method of claim 8, wherein the second atomic layer deposition process is performed in a process chamber and the plasma is generated within the process chamber.

11. The method of claim 1, wherein the first atomic layer deposition process occurs at a temperature in a range of about 20°

C. to about 150°

C.

12. The method of claim 1, wherein the second atomic layer deposition process occurs at a temperature in a range of about 75°

C. to about 500°

C.

13. The method of claim 1, further comprising exposing the substrate to a purge gas during a purge process.

14. The method of claim 13, wherein the purge process occurs after one or more of the first atomic layer deposition process and the second atomic layer deposition process.

15. The method of claim 13, wherein the purge gas is selected from an inert gas.

16. The method of claim 15, wherein the inert gas is selected from nitrogen, argon and combinations thereof.

17. The method of claim 1, wherein the mixed film has a thickness up to about 500 Å

.

18. The method of claim 1, wherein the first atomic layer deposition process forms less than a full monolayer of silicon oxide and the second atomic layer deposition process forms less than a full monolayer of one or more of silicon nitride and silicon creating a mixture of partial monolayers without distinct layers of silicon oxide and one or more of silicon nitride and silicon.

19. A method of forming a mixed film on a substrate, the method comprising:

(a) disposing a substrate within a processing chamber;

(b) performing a first atomic layer deposition process comprising;

(i) flowing hexachlorodisilane gas to at least a portion of the substrate within the chamber under conditions which form a partial monolayer on the substrate, the partial monolayer comprising silicon terminated with chlorine,

(ii) purging the hexachlorodisilane,

(iii) flowing water vapor to the substrate within the chamber under conditions which form a partial monolayer on the substrate, the partial monolayer comprising silicon oxide and

(iv) purging the water vapor;

(c) performing a second atomic layer deposition process comprising;

(i) flowing disilane gas to at least a portion of the substrate within the chamber under conditions which form a partial monolayer comprising silicon,

(ii) purging the disilane,

(iii) flowing one or more of a nitrogen plasma and a reductant to the substrate within the chamber under conditions to form a partial monolayer comprising one or more of silicon nitride and silicon,and

(iv) purging the one or more of nitrogen plasma and reductant; and

(d) repeating steps (b) and (c).

20. A method for forming a film on a substrate, the method comprising:

exposing the substrate sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process;

exposing the substrate sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species to form at least a partial layer of one or more of silicon nitride and silicon on the substrate during a second atomic layer deposition process; and

repeating sequentially the first atomic layer deposition process and the second atomic layer deposition process to form one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film, the film having a refractive index and absorption coefficient.