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BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF FABRICATION

  • US 20120112280A1
  • Filed: 11/10/2010
  • Published: 05/10/2012
  • Est. Priority Date: 11/10/2010
  • Status: Active Grant
First Claim
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1. A structure, comprising:

  • a silicon layer on a buried oxide layer of a silicon-on-insulator substrate;

    a trench in said silicon layer extending from a top surface of said silicon layer into said silicon layer, said trench not extending to said buried oxide layer;

    a doped region in said silicon layer between and abutting said buried oxide layer and a bottom of said trench, said first doped region doped to a first dopant concentration;

    a first epitaxial layer, doped to a second dopant concentration, in a bottom of said trench;

    a second epitaxial layer, doped to a third dopant concentration, on said first epitaxial layer in said trench; and

    wherein said third dopant concentration is greater than said first and second dopant concentrations and said first dopant concentration is greater than said second dopant concentration.

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