FLEXIBLE ELECTRONIC DEVICES AND RELATED METHODS

• US 20120112347A1
• Filed: 10/06/2011
• Published: 05/10/2012
• Est. Priority Date: 06/11/2010
• Status: Active Grant

• Current Assignee: Premitec, Inc.
• Original Assignee: Premitec, Inc.
• Inventors: Eckhardt, Helmut, Ufer, Stefan
• Granted Patent: US 8,525,340 B2
• Time in Patent Office: Days
• US Class Current: 257/751
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/2413 Connecting within a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/24145 the bodies being stacked
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/82005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/9202 Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/92144 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2225/06524 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49822 : Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/4985 : Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias

Abstract

A packaged electronic device includes a flexible circuit structure and a die. The flexible circuit structure includes a first structural layer and electrical conductors. The die is bonded to the flexible circuit structure by a flexible attachment layer. The die includes interconnects in electrical contact with die circuitry and extending through the die, through the flexible attachment layer, and into electrical contact with respective electrical conductors at first ends. A flexible second structural layer is disposed on the die and exposed portions of the electrical conductors, wherein the die and the electrical conductors are encapsulated by the first structural layer and the second structural layer. The first structural layer and/or the second structural layer include a plurality of openings defining respective exposed areas on the electrical conductors at second ends.

Claims

1. A packaged electronic device, comprising:

a flexible circuit structure comprising a first structural layer and a plurality of electrical conductors disposed on the first structural layer, the plurality of electrical conductors comprising a plurality of respective first ends and a plurality of respective second ends;

a die comprising a first surface, an opposing second surface, and die circuitry formed on the first surface, the die bonded to the flexible circuit structure by a flexible attachment layer interposed between the second surface and the first structural layer, the die further comprising a plurality of through-wafer interconnects in electrical contact with the die circuitry and extending through the die, through the flexible attachment layer, and into electrical contact with the respective electrical conductors at the first ends;

a flexible second structural layer disposed on the die and exposed portions of the electrical conductors, wherein the die and the electrical conductors are encapsulated by the first structural layer and the second structural layer; and

wherein at least one of the first structural layer and the second structural layer comprises a plurality of openings defining respective exposed areas on the electrical conductors at the second ends.

2. The packaged electronic device of claim 1, wherein the die includes a material selected from the group consisting of semiconductors, compound semiconductors, metalloids, ceramics, glasses, polymers, and metals.

3. The packaged electronic device of claim 1, wherein the die is sufficiently thin that the packaged electronic device is rollable into a cylinder having an outermost radius of 1 mm or less.

4. The packaged electronic device of claim 1, wherein the die has a thickness ranging from 10 μ

m to 50 μ

m.

5. The packaged electronic device of claim 1, wherein the attachment layer has a thickness ranging from 0.5 μ

m to 5 μ

m.

6. The packaged electronic device of claim 1, wherein the first structural layer has a thickness ranging from 2 μ

m to 100 μ

m.

7. The packaged electronic device of claim 1, wherein the second structural layer has a thickness ranging from 2 μ

m to 100 μ

m.

8. The packaged electronic device of claim 1, wherein the attachment layer includes a polymer selected from the group consisting of polyimide, copolymers of polyimide, blends of polyimide, polyparaxylylene, liquid-crystal polymers, and benzocyclobutene.

9. The packaged electronic device of claim 1, wherein the first structural layer includes a polymer selected from the group consisting of polyimide, copolymers of polyimide, blends of polyimide, polyparaxylylene, liquid-crystal polymers, and benzocyclobutene.

10. The packaged electronic device of claim 1, wherein the second structural layer includes a polymer selected from the group consisting of polyimide, copolymers of polyimide, blends of polyimide, polyparaxylylene, liquid-crystal polymers, and benzocyclobutene.

11. The packaged electronic device of claim 1, wherein the first structural layer, the second structural layer and the attachment layer each include a polymer selected from the group consisting of polyimide, copolymers of polyimide, blends of polyimide, polyparaxylylene, liquid-crystal polymers, and benzocyclobutene.

12. The packaged electronic device of claim 1, further comprising a barrier film disposed on at least one of the first structural layer and the second structural layer.

13. The packaged electronic device of claim 12, wherein the barrier film comprises elements selected from the group consisting of (1) M, O, C, H, and N, wherein M is a metal selected from the group consisting of silicon, titanium, tantalum, germanium, boron, zirconium, aluminum, hafnium and yttrium;

(2) M, O, H, and N;

(3) C;

(4) O, C, H, and N; and

(5) M or C, and one of O, H, or N.

14. The packaged electronic device of claim 13, wherein the barrier film comprises diamond-like carbon.

15. The packaged electronic device of claim 12, wherein the barrier film is terminated with at least one of an electrophilic functional group or a nucleophilic functional group.

16. The packaged electronic device of claim 12, wherein the barrier film has a surface modified to be hydrophilic, hydrophobic, adsorptive of a desired biomaterial, or non-adsorptive of a desired biomaterial.

17. The packaged electronic device of claim 1, wherein at least one of the first structural layer and the second structural layer is biocompatible.

18. The packaged electronic device of claim 1, wherein the flexible circuit structure includes an elongated cable portion, and the openings that define the exposed areas on the electrical conductors are disposed in the cable portion.

19. The packaged electronic device of claim 18, further including a remote device attached to the cable portion and electrically communicating with the electrical conductors through the openings.

20. The packaged electronic device of claim 19, wherein the remote device includes an array of microelectrodes.

21. The packaged electronic device of claim 1, comprising a second die bonded to the flexible circuit structure by a second flexible attachment layer interposed between the second die and the first structural layer, the second die comprising second die circuitry and a plurality of second through-wafer interconnects in electrical contact with the second die circuitry and extending through the second die, through the second flexible attachment layer, and into contact with the respective electrical conductors at respective intermediate locations of the electrical conductors between the first ends and the second ends, wherein the second die is encapsulated by the first structural layer and the second structural layer.

22. The packaged electronic device of claim 1, wherein the die bonded to the flexible circuit structure is a first die, and further comprising a second die bonded to the first die by a second flexible attachment layer interposed between the second die and the first surface, the second die comprising second die circuitry and one or more second through-wafer interconnects in electrical contact with the second die circuitry and extending through the second die, through the second flexible attachment layer, and into contact with the die circuitry of the first die, wherein the second die is encapsulated by the first structural layer and the second structural layer.

23. The packaged electronic device of claim 1, wherein the plurality of electrical conductors is arranged as a plurality of layers of electrical conductors, and further comprising one or more intermediate flexible structural layers, each intermediate flexible structural layer interposed between two neighboring layers of electrical conductors.

24. The packaged electronic device of claim 1, wherein the plurality of openings is formed in the second structural layer and is on the same side of the electrical conductors as the die.

25. The packaged electronic device of claim 1, wherein the plurality of openings is formed in the first structural layer and is on an opposite side of the electrical conductors as the die.

26. The packaged electronic device of claim 1, wherein one or more of the openings are formed in the first structural layer and the other opening or openings are formed in the second structural layer, such that one or more openings are on the same side of the electrical conductors as the die and one or more openings are on an opposite side of the electrical conductors as the die.