SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate having a via hole, the via hole comprising a first region having a first width and a second region having a second width greater than the first width; and
an insulating region including an air gap surrounding and spaced apart from the first region of the via hole.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.
62 Citations
20 Claims
-
1. A semiconductor device comprising:
-
a substrate having a via hole, the via hole comprising a first region having a first width and a second region having a second width greater than the first width; and an insulating region including an air gap surrounding and spaced apart from the first region of the via hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10-15. -15. (canceled)
-
16. A semiconductor device comprising:
-
a semiconductor substrate; a through silicon via extending from a first surface of the substrate to a second surface of the substrate opposite the first surface, wherein the through silicon via includes a first region having a first width and a second region having a second width greater than the first width; and an air gap surrounding and spaced apart from the first region of the through silicon via, wherein the air gap is positioned under the second region of the through silicon via. - View Dependent Claims (17, 18, 19, 20)
-
Specification