Methods Of Forming Patterned Masks
First Claim
1. A method of forming a patterned mask, comprising:
- forming spaced-apart first features over a base, the first features comprising a first material and having sidewalls;
the first features being spaced from one another by gaps;
the first material having a reflow temperature;
forming a second material along the sidewalls of the first features;
the second material being compositionally different from the first material;
forming a third material over the second material and the first features, the third material being at a temperature above the reflow temperature of the first material as the third material is formed;
the third material being compositionally different from the second material;
the third material having a topography which defines recesses over segments of the gaps;
forming a pedestals within said recesses;
the pedestals comprising fourth material which is compositionally different from the third material;
removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the first features; and
removing the first features and at least some of the third material to leave a patterned mask comprising the second features in combination with other features defined by the pedestals.
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Accused Products
Abstract
Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
16 Citations
28 Claims
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1. A method of forming a patterned mask, comprising:
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forming spaced-apart first features over a base, the first features comprising a first material and having sidewalls;
the first features being spaced from one another by gaps;
the first material having a reflow temperature;forming a second material along the sidewalls of the first features;
the second material being compositionally different from the first material;forming a third material over the second material and the first features, the third material being at a temperature above the reflow temperature of the first material as the third material is formed;
the third material being compositionally different from the second material;
the third material having a topography which defines recesses over segments of the gaps;forming a pedestals within said recesses;
the pedestals comprising fourth material which is compositionally different from the third material;removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the first features; and removing the first features and at least some of the third material to leave a patterned mask comprising the second features in combination with other features defined by the pedestals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a patterned mask, comprising:
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forming spaced-apart first features over a base, the first features comprising a first material and having sidewalls;
the first features being spaced from one another by gaps;forming a second material along the sidewalls of the first features;
the second material being compositionally different from the first material;removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the first features; the first and second features together forming a plurality of projections over the base; forming a third material over the projections and between the projections;
the third material having an undulating topography with peaks over the projections and valleys between the peaks;
the third material being compositionally different from the second material;forming a fourth material within the valleys;
the fourth material being compositionally different from the third material;subjecting the third material to an etch while using the fourth material as a mask to pattern the third material into a plurality of third features; and after patterning the third material into the third features, removing the first features to leave a patterned mask comprising the second and third features. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A method of forming a patterned mask, comprising:
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forming spaced-apart photoresist features over a base, the photoresist features having sidewalls, and being spaced from one another by gaps; forming a second material along the sidewalls of the photoresist features;
the second material not being photoresist;removing some of the second material from within the gaps to pattern the second material into a plurality of second features along the sidewalls of the photoresist features;
the photoresist features and the second features together forming a plurality of spaced-apart laminate structures;forming a third material over the laminate structures while leaving recesses extending to the base between the laminate structures;
the third material being compositionally different from the second material;forming pedestals within the gaps;
the pedestals comprising fourth material which is compositionally different from the third material; andafter forming the fourth material, removing at least some of the third material and the photoresist features to leave a patterned mask comprising the second features and the pedestals. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification