Coated Fullerenes, Compositions And Dielectrics Made Therefrom
First Claim
1. A coated fullerene comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene.
2 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.
7 Citations
47 Claims
- 1. A coated fullerene comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene.
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19. A composite comprising a coated fullerene comprising:
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a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene; and at least one composite matrix selected from the group consisting of polymers, ceramics, inorganic oxides, and combinations thereof. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A method of making a coated fullerene interconnect device comprising a layer of at least one inorganic material covering at least a portion of at least one surface of fullerenes wherein:
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at least two fullerenes are contacting each other to form a spontaneous interconnect; and
at least one suitable metal contact is found at the site of at least one spontaneous interconnect, wherein said method comprises;(a) dispersing a fullerene under suitable conditions to provide a dispersed fullerene; (b) depositing at least one inorganic material under suitable conditions onto at least one surface of the dispersed fullerene to provide a coated fullerene; (c) isolating the coated fullerene; (d) removing at least a portion of the layer of inorganic material in a manner suitable for permitting at least two fullerenes to contact each other to provide at least one spontaneous interconnect; (e) optionally, allowing at least two fullerenes of a spontaneous interconnect to separate; (f) optionally, allowing at least two fullerenes to contact each other to provide at least one new spontaneous interconnect; and (g) depositing a suitable metal contact at the site of at least one spontaneous interconnect and/or one new spontaneous interconnect. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A coated fullerene interconnect device comprising:
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a layer of at least one inorganic material covering at least a portion of at least one surface of fullerenes, wherein at least two fullerenes are contacting each other to form a spontaneous interconnect; and at least one suitable metal contact is found at the site of at least one spontaneous interconnect. - View Dependent Claims (41, 42, 43)
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44. A method of depositing a dielectric onto a silicon computer chip comprising a coated fullerene comprising:
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a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene onto a computer chip, wherein the method comprises contacting a solution comprising coated fullerene with at least one region of a computer chip in a manner effective for depositing a dielectric layer to said region. - View Dependent Claims (45, 46, 47)
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Specification