SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20120119212A1
• Filed: 11/04/2011
• Published: 05/17/2012
• Est. Priority Date: 11/11/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ENDO, Yuta, SASAKI, Toshinari, NODA, Kosei
• Granted Patent: US 8,802,515 B2
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 21/02 Manufacture or treatment of semiconductor devices or of parts thereof
• CPC Class Codes: H01L 21/02112 characterised by the material of the layer
• CPC Class Codes: H01L 21/02403 Oxides
• CPC Class Codes: H01L 21/28 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 etching for patterning the electrodes H01L21/311, H01L21/3213; multistep manufacturing processes for data storage electrodes H01L29/4011
• CPC Class Codes: H01L 21/425 producing ion implantation
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

Claims

1. A semiconductor device comprising:

an oxide semiconductor layer comprising;

a pair of oxynitride semiconductor regions; and

an oxide semiconductor region between the pair of oxynitride semiconductor regions.

2. The semiconductor device according to claim 1 further comprising:

a gate insulating film in contact with at least a part of the oxide semiconductor layer; and

a gate electrode configured to overlap with the oxide semiconductor region with the gate insulating film interposed therebetween.

3. The semiconductor device according to claim 2, wherein the pair of the oxynitride semiconductor regions is formed in a self-aligned manner with respect to the gate electrode.

4. The semiconductor device according to claim 1, wherein:

the pair of oxynitride semiconductor regions serves as a source region and a drain region of a transistor, and

the oxide semiconductor region serves as a channel region of the transistor.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor region and each of the pair of oxynitride semiconductor regions comprise two or more of In, Ga, Sn, and Zn.

6. The semiconductor device according to claim 1, wherein a nitrogen concentration of each of the pair of oxynitride semiconductor regions is higher than or equal to 0.01 at. % and lower than or equal to 30 at. %.

7. The semiconductor device according to claim 1, wherein:

a hydrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 1×

10¹⁹ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³; and

a hydrogen concentration of the oxide semiconductor region is lower than or equal to 1×

10²⁰ atoms/cm³.

8. The semiconductor device according to claim 2 further comprising:

an insulating film over the pair of oxynitride semiconductor regions and a gate electrode;

a contact hole in the insulating film, which reaches one of the pair of oxynitride semiconductor regions; and

a wiring connected to the one of the pair of oxynitride semiconductor regions through the contact hole.

9. The semiconductor device according to claim 8, wherein the insulating film comprises hydrogen at a concentration higher than or equal to 0.1 at. % and lower than or equal to 25 at. %.

10. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over an insulating surface;

forming a gate insulating film over the oxide semiconductor film;

forming a gate electrode over the gate insulating film;

forming a pair of oxynitride semiconductor regions by implanting an ion including nitrogen into the oxide semiconductor film with the gate electrode used as a mask; and

forming a wiring connected to one of the pair of oxynitride semiconductor regions.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the ion including nitrogen is implanted so that a nitrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 0.01 at. % and lower than or equal to 30 at. %.

12. The method for manufacturing a semiconductor device according to claim 10, wherein the oxide semiconductor film is formed so that a hydrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 1×

10¹⁹ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³, and so that a hydrogen concentration of a region sandwiched between the pair of oxynitride semiconductor regions is lower than or equal to 1×

10²⁰ atoms/cm³.

13. The method for manufacturing a semiconductor device according to claim 10, wherein the oxide semiconductor film is provided to comprise two or more of In, Ga, Sn, and Zn.

14. The method for manufacturing a semiconductor device according to claim 10, wherein oxygen is released from at least one of an insulating film having the insulating surface and the gate insulating film by heating.

15. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over an insulating surface;

forming a gate insulating film covering the oxide semiconductor film;

forming a conductive film over the gate insulating film;

forming a gate electrode by processing the conductive film;

forming a pair of oxynitride semiconductor regions in a region of the oxide semiconductor film, which does not overlap with the gate electrode, by implanting an ion including nitrogen into the oxide semiconductor film through the gate insulating film; and

forming a wiring connected to one of the pair of oxynitride semiconductor regions.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the ion including nitrogen is implanted so that a nitrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 0.01 at. % and lower than or equal to 30 at. %.

17. The method for manufacturing a semiconductor device according to claim 15, wherein the oxide semiconductor film is formed so that a hydrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 1×

10¹⁹ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³, and so that a hydrogen concentration of a region sandwiched between the pair of oxynitride semiconductor regions is lower than or equal to 1×

10²⁰ atoms/cm³.

18. The method for manufacturing a semiconductor device according to claim 15, wherein the oxide semiconductor film is provided to comprise two or more of In, Ga, Sn, and Zn.

19. The method for manufacturing a semiconductor device according to claim 15, wherein oxygen is released from at least one of an insulating film having the insulating surface and the gate insulating film by heating.

20. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over an insulating surface;

forming a first insulating film covering the oxide semiconductor film;

forming a conductive film over the first insulating film;

forming a gate electrode and a gate insulating film from which a part of the oxide semiconductor film is exposed, by processing the conductive film and the first insulating film;

forming a pair of oxynitride semiconductor regions in the part of the exposed oxide semiconductor film by implanting an ion including nitrogen into the oxide semiconductor film; and

forming a wiring connected to one of the pair of oxynitride semiconductor regions.

21. The method for manufacturing a semiconductor device according to claim 20, wherein the ion including nitrogen is implanted so that a nitrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 0.01 at. % and lower than or equal to 30 at. %.

22. The method for manufacturing a semiconductor device according to claim 20, wherein the oxide semiconductor film is formed so that a hydrogen concentration of the pair of oxynitride semiconductor regions is higher than or equal to 1×

10¹⁹ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³, and so that a hydrogen concentration of a region sandwiched between the pair of oxynitride semiconductor regions is lower than or equal to 1×

10²⁰ atoms/cm³.

23. The method for manufacturing a semiconductor device according to claim 20, wherein the oxide semiconductor film is provided to comprise two or more of In, Ga, Sn, and Zn.

24. The method for manufacturing a semiconductor device according to claim 20, wherein oxygen is released from at least one of a second insulating film having the insulating surface and the gate insulating film by heating.