LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20120119249A1
• Filed: 10/05/2011
• Published: 05/17/2012
• Est. Priority Date: 11/15/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: SONE, Cheol-soo, KIM, Tae-hyung, YANG, Jong-in, SONG, Sang-yeob, LEE, Si-hyuk
• Granted Patent: US 8,735,932 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.

Claims

1. A light-emitting device comprising:

a compound semiconductor structure which comprises a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;

a first electrode layer and a second electrode layer which are disposed on a top surface of the second compound semiconductor layer and are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer;

an insulating layer which is coated on a portion other than portions where the first electrode layer and the second electrode layer are located;

a conducting adhesive layer which is formed on a top surface of a non-conductive substrate and connects the non-conductive substrate to the first electrode layer and the insulating layer;

a first electrode connection layer which is formed on one side surfaces of the non-conductive substrate and the conducting adhesive layer and is connected to the conducting adhesive layer; and

a second electrode connection layer which is formed on the other side surfaces of the non-conductive substrate and the conducting adhesive layer and is connected to the second electrode layer.

2. The light-emitting device of claim 1, wherein the first electrode connection layer is electrically connected to the first electrode layer through the conducting adhesive layer.

3. The light-emitting device of claim 1, further comprising an insulating film which is disposed between the second electrode connection layer and the conducting adhesive layer.

4. The light-emitting device of claim 3, wherein the insulating film extends to cover a side surface of the second electrode layer and a side surface of the non-conductive substrate.

5. The light-emitting device of claim 1, wherein the second electrode connection layer is connected to an upper side of the second electrode layer.

6. The light-emitting device of claim 1, wherein the non-conductive substrate, the first electrode connection layer, and the second electrode connection layer are connected to a package by a conductive adhesive layer, and a via-hole is formed in the conductive adhesive layer and the package to short-circuit the first electrode connection layer and the second electrode connection layer.

7. The light-emitting device of claim 1, further comprising a protective layer which is disposed to surround the compound semiconductor structure.

8. The light-emitting device of claim 1, further comprising a protective layer which is disposed to surround the compound semiconductor structure, the first electrode connection layer, and the second electrode connection layer.

9. A method of manufacturing a light-emitting device, the method comprising:

forming a compound semiconductor structure by stacking a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a substrate;

forming a first electrode layer and a second electrode layer, which are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer, on a top surface of the compound semiconductor structure;

coating an insulating layer on a portion other than portions where the first electrode layer and the second electrode layer are located;

adhering a non-conductive substrate to the insulating layer and the first electrode layer by using a conducting adhesive layer;

exposing a portion of the conducting adhesive layer and a portion of a top surface of the second electrode layer;

connecting a first electrode connection layer to the conducting adhesive layer; and

connecting a second electrode connection layer to the second electrode layer.

10. The method of claim 9, wherein the exposing of the portion of the conducting adhesive layer and the portion of the top surface of the second electrode layer comprises removing portions of both sides of the compound semiconductor structure.

11. The method of claim 9, wherein the connecting of the first electrode connection layer to the conducting adhesive layer comprises forming the first electrode connection layer on one side surfaces of the conducting adhesive layer and the non-conductive substrate and the exposed portion of a top surface of the conducting adhesive layer.

12. The method of claim 9, before the connecting of the second electrode connection layer to the second electrode layer, the method further comprising forming an insulating film on the other side surfaces of the conducting adhesive layer and the non-conductive substrate and a side surface of the second electrode layer.

13. The method of claim 12, wherein the connecting of the second electrode connection layer to the second electrode layer comprises forming the second electrode connection layer to be connected to the portion of the top surface of the second electrode layer while surrounding the insulating film.

14. The method of claim 13, further comprising connecting the non-conductive substrate, the first electrode connection layer, and the second electrode connection layer to a package by using a conductive adhesive layer.

15. The method of claim 14, further comprising short-circuiting the first electrode connection layer and the second electrode connection layer by forming a via-hole that passes through the conductive adhesive layer and the package to reach the non-conductive substrate.

16. The method of claim 9, further comprising:

removing the substrate; and

forming a protective layer to surround the compound semiconductor structure.

17. The method of claim 9, before the adhering of the non-conductive substrate to the insulating layer and the first electrode layer by using the conducting adhesive layer, the method further comprising removing a portion of the insulating layer that covers a top surface of the first electrode layer, and exposing the first electrode layer to the outside of the insulating layer by filling a material used to form the first electrode layer in the removed portion of the insulating layer.