METHOD FOR MANUFACTURING BONDED WAFER

• US 20120119336A1
• Filed: 05/06/2010
• Published: 05/17/2012
• Est. Priority Date: 05/07/2009
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Akiyama, Shoji
• Granted Patent: US 8,975,159 B2
• Time in Patent Office: Days
• US Class Current: 257/629
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method for manufacturing a bonded wafer having a semiconductor film on a handle substrate involving the steps of: implanting ions into a semiconductor substrate to form an ion-implanted layer; subjecting the surface of at least one of the semiconductor substrate and the handle substrate to a surface activation treatment; bonding the surface of the semiconductor substrate to the surface of the handle substrate at a temperature from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to obtain a bonded body; and transferring a semiconductor film to the handle substrate by subjecting the bonded body to a temperature 30° C. to 100° C. higher than the bonding temperature, and irradiating the bonded body with visible light from a handle or semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to embrittle the interface of the ion-implanted layer.

Claims

1. A method for manufacturing a bonded wafer comprising a semiconductor film on a surface of a handle substrate, the method comprising the steps of:

implanting ions into a semiconductor substrate from a surface of the semiconductor substrate to form an ion-implanted layer;

subjecting at least one of the surface of the ion-implanted semiconductor substrate and the surface of the handle substrate to a surface activation treatment;

bonding, after the surface activation treatment, the surface of the semiconductor substrate to the surface of the handle substrate at a temperature of from 50°

C. to 350°

C.;

heating the bonded substrates at a maximum temperature of from 200°

C. to 350°

C. to obtain a bonded body; and

transferring the semiconductor film to the handle wafer by subjecting the bonded body to a temperature higher by 30°

C. to 100°

C. than the bonding temperature in the step of bonding, and irradiating the bonded body with visible light from a handle substrate side or a semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to make an interface of the ion-implanted layer brittle.

2. The method for manufacturing a bonded wafer according to claim 1, wherein the surface activation treatment comprises one or more treatments selected from the group consisting of an ozone water treatment, a UV-ozone treatment, an ion beam treatment and a plasma treatment.

3. The method for manufacturing a bonded wafer according to claim 1, wherein the step of transferring comprises applying a mechanical impact to the interface of the ion-implanted layer for detachment along the interface, after the irradiation with visible light.

4. The method for manufacturing a bonded wafer according to claim 1, wherein the step of transferring comprises applying a mechanical impact to a vicinity of an interface between the bonded substrates at an edge of the bonded body, before the irradiation with visible light.

5. The method for manufacturing a bonded wafer according to claim 1, wherein the handle substrate is made of glass, quartz or sapphire.

6. The method for manufacturing a bonded wafer according to claim 1, wherein the semiconductor substrate is made of GaN, ZnO, diamond or AlN.

7. The method for manufacturing a bonded wafer according to claim 1, wherein the semiconductor substrate is made of single crystal silicon, or silicon with an oxide film grown thereon.

8. The method for manufacturing a bonded wafer according to claim 1, wherein the semiconductor substrate is made of GaN, ZnO, diamond or AlN, and the handle substrate is made of silicon, silicon carbide or AlN (non-single crystal).

9. The method for manufacturing a bonded wafer according to claim 1, wherein the visible light is laser light.

10. The method for manufacturing a bonded wafer according to claim 1, wherein the visible light is of rapid thermal anneal (RTA) comprising spike anneal.

11. The method for manufacturing a bonded wafer according to claim 1, wherein the visible light is flash lamp light.

12. The method for manufacturing a bonded wafer according to claim 1, wherein the implanted ions are hydrogen atomic ions (H⁺), and a dose of the hydrogen ions (H⁺) is from 5×

10¹⁶ atoms/cm² to 2×

10¹⁷ atoms/cm².

13. The method for manufacturing a bonded wafer according to claim 1, wherein the implanted ions are hydrogen molecular ions (H₂⁺), and a dose of the hydrogen molecular ions (H₂⁺) is from 2.5×

10¹⁵ atoms/cm² to 1×

10¹⁷ atoms/cm².

14. A bonded wafer obtained by the method for manufacturing according to claim 1.

15. The method for manufacturing a bonded wafer according to claim 2, wherein the step of transferring comprises applying a mechanical impact to the interface of the ion-implanted layer for detachment along the interface, after the irradiation with visible light.

16. The method for manufacturing a bonded wafer according to claim 2, wherein the step of transferring comprises applying a mechanical impact to a vicinity of an interface between the bonded substrates at an edge of the bonded body, before the irradiation with visible light.