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METHOD FOR MANUFACTURING BONDED WAFER

  • US 20120119336A1
  • Filed: 05/06/2010
  • Published: 05/17/2012
  • Est. Priority Date: 05/07/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a bonded wafer comprising a semiconductor film on a surface of a handle substrate, the method comprising the steps of:

  • implanting ions into a semiconductor substrate from a surface of the semiconductor substrate to form an ion-implanted layer;

    subjecting at least one of the surface of the ion-implanted semiconductor substrate and the surface of the handle substrate to a surface activation treatment;

    bonding, after the surface activation treatment, the surface of the semiconductor substrate to the surface of the handle substrate at a temperature of from 50°

    C. to 350°

    C.;

    heating the bonded substrates at a maximum temperature of from 200°

    C. to 350°

    C. to obtain a bonded body; and

    transferring the semiconductor film to the handle wafer by subjecting the bonded body to a temperature higher by 30°

    C. to 100°

    C. than the bonding temperature in the step of bonding, and irradiating the bonded body with visible light from a handle substrate side or a semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to make an interface of the ion-implanted layer brittle.

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