Semiconductor Device and Manufacturing Method of the Same
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Accused Products
Abstract
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
7 Citations
60 Claims
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1-31. -31. (canceled)
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32. A semiconductor device comprising:
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a semiconductor integrated circuit over a second insulator; an antenna electrically connected to the semiconductor integrated circuit; and a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween, wherein the conductive film is electrically isolated from the semiconductor integrated circuit, and wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A semiconductor device comprising:
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a semiconductor integrated circuit over a second insulator; an antenna electrically connected to the semiconductor integrated circuit; a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween; and a third insulator provided so that the second insulator is surrounded by the third insulator, wherein the conductive film is electrically isolated from the semiconductor integrated circuit, and wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A semiconductor device comprising:
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a semiconductor integrated circuit over a second insulator; an antenna electrically connected to the semiconductor integrated circuit; a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween; and a third insulator provided so that the second insulator is surrounded by the third insulator, wherein the conductive film is electrically isolated from the semiconductor integrated circuit, wherein the second insulator has a region which is melted and fused together, and wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa. - View Dependent Claims (53, 54, 55, 56, 57, 58, 59, 60)
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Specification