Dual-Port Semiconductor Memory and First-In First-Out (FIFO) Memory Having Electrically Floating Body Transistor
First Claim
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1. A multi-port semiconductor memory cell comprising:
- a plurality of gates;
a common body region of a first conductivity type configured to store a charge that is indicative of a memory state of said memory cell; and
a plurality of conductive regions of a second conductivity type,wherein one of the plurality of conductive regions separates each of the plurality of gates from the other of the plurality of gates.
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Abstract
Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.
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Citations
19 Claims
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1. A multi-port semiconductor memory cell comprising:
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a plurality of gates; a common body region of a first conductivity type configured to store a charge that is indicative of a memory state of said memory cell; and a plurality of conductive regions of a second conductivity type, wherein one of the plurality of conductive regions separates each of the plurality of gates from the other of the plurality of gates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10, 11, 12, 13, 14, 15)
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9. The multi-port semiconductor memory cell of 7, wherein the fin structure further includes the plurality of conductive regions.
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16. (canceled)
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17. A multi-port semiconductor memory cell comprising:
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a plurality of ports; a floating body transistor, wherein the floating body transistor includes a floating body region configured to store a charge that is indicative of the state of said memory cell; and a plurality of access transistors, wherein each of the plurality of access transistors corresponds to a respective one of the plurality of ports. - View Dependent Claims (18)
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19. A semiconductor memory cell comprising:
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a plurality of transistors, wherein each of the plurality of transistors comprising; a common body region configured to store a charge that is indicative of the state of said memory cell; and a plurality of gates, wherein said common body region is shared among the plurality of transistors, and further wherein said memory cell comprises a terminal configured to at least one of inject a charge into and extract the charge out of the common body region to maintain said memory state of the semiconductor memory cell.
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Specification