INERTIAL SENSOR

• US 20120125096A1
• Filed: 10/27/2011
• Published: 05/24/2012
• Est. Priority Date: 11/18/2010
• Status: Abandoned Application

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Jeung, Won Kyu, Yang, Si Joong, Park, Heung Woo, Lee, Hyun Kee
• Application Number:
  US13/283,517
• Publication Number:
  US 20120125096A1
• Time in Patent Office: Days
• US Class Current: 73/504.12
• CPC Class Codes: G01C 19/5783 Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719

Abstract

Disclosed herein is an inertial sensor which includes a sensing unit including a mass mounted to be displaced on a flexible substrate part, a driving unit moving the mass, and a displacement detecting unit detecting a displacement of the mass, the inertial sensor comprising: a top cap covering a top of the flexible substrate part; and a bottom cap covering a bottom of the mass. Thereby, the inertial sensor can be implemented in an economic EMC molding package shape, while protecting the mass and the piezo-electric element. Further, the inertial sensor optimizes a thickness of the cap covering the mass and the piezo-electric element and an interval between the mass and the piezo-electric element to have improved freedom in design of space utilization as well as improved driving characteristics and Q values.

Claims

1. An inertial sensor which includes a sensing unit including a mass mounted to be displaced on a flexible substrate part, a driving unit moving the mass, and a displacement detecting unit detecting a displacement of the mass, the inertial sensor comprising:

a top cap covering a top of the flexible substrate part; and

a bottom cap covering a bottom of the mass.

2. The inertial sensor as set forth in claim 1, wherein the top cap and the bottom cap have a thickness of 100 to 200 μ

m, respectively.

3. The inertial sensor as set forth in claim 1, wherein when the top cap and the bottom cap are each formed of a 4-inch substrate, they have a thickness of 100 μ

m, when the top cap and the bottom cap are each formed of a 6 to 8-inch substrate, they have a thickness of 120 to 150 μ

m, and when the top cap and the bottom cap are each formed of a 12-inch substrate, they have a thickness of 150 to 200 μ

m.

4. The inertial sensor as set forth in claim 1, wherein the top cap has an etching part formed at an edge portion thereof, the etching part being subjected to an anisotropic dry etching process using fluorine or chlorine.

5. The inertial sensor as set forth in claim 1, wherein the top cap has an etching part formed at an edge portion thereof, the etching part being subjected to an anisotropic wet etching process using TMAH or KOH.

6. The inertial sensor as set forth in claim 1, wherein the top cap and the bottom cap are made of silicon or Pyrex glass.

7. The inertial sensor as set forth in claim 1, wherein the sensing unit further includes a support supporting the flexible substrate part and the mass.

8. The inertial sensor as set forth in claim 7, wherein the top cap and the bottom cap are thinned and then are bonded to a top of the flexible substrate part and a bottom of the support, respectively.

9. The inertial sensor as set forth in claim 8, wherein a cavity is formed between the top cap and the flexible substrate part and between a mass and the bottom cap, respectively.

10. The inertial sensor as set forth in claim 9, wherein the cavity has a height of 20 to 100 μ

m.

11. The inertial sensor as set forth in claim 8, wherein the top cap and the bottom cap are each bonded to the top of the flexible substrate part and the bottom of the support by wafer level bonding or bonding using adhesive.

12. The inertial sensor as set forth in claim 1, further comprising:

an ASIC chip coupled to the bottom of the sensing unit;

a lead frame or a flexible substrate coupled to the bottom of the ASIC chip; and

a wire connecting between the sensing unit and the ASIC chip and between the ASIC chip and the lead frame or the flexible substrate, respectively.