ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT
First Claim
1. A method of fabricating a light emitting diode (LED) comprising:
- providing a growth substrate;
growing first epitaxial layers on the growth substrate, wherein the first epitaxial layers include an un-doped layer above the growth substrate and an n-doped layer above the un-doped layer;
patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region;
etching the first region of the n-doped layer to create a roughened surface of the first region of the n-doped layer;
growing additional epitaxial layers on the mesa region of the n-doped layer, wherein the additional epitaxial layers include an active layer above the mesa region of the n-doped layer and a p-doped layer above the active layer; and
forming metal contacts on the p-doped layer and on the roughened surface of the n-doped layer in the first region.
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Abstract
The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.
7 Citations
20 Claims
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1. A method of fabricating a light emitting diode (LED) comprising:
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providing a growth substrate; growing first epitaxial layers on the growth substrate, wherein the first epitaxial layers include an un-doped layer above the growth substrate and an n-doped layer above the un-doped layer; patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region; etching the first region of the n-doped layer to create a roughened surface of the first region of the n-doped layer; growing additional epitaxial layers on the mesa region of the n-doped layer, wherein the additional epitaxial layers include an active layer above the mesa region of the n-doped layer and a p-doped layer above the active layer; and forming metal contacts on the p-doped layer and on the roughened surface of the n-doped layer in the first region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a light emitting diode (LED) comprising:
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providing a growth substrate; growing an n-doped layer of a semiconductor material on the growth substrate; forming a patterned first dielectric layer to cover a mesa region of the n-doped layer; etching the n-doped layer not covered by the patterned first dielectric layer to form an etched region of the n-doped layer surrounding a mesa structure, wherein the mesa structure includes the mesa region of the n-doped layer capped by the patterned first dielectric layer; roughening the etched region of the n-doped layer to form a scattering mirror; removing the patterned first dielectric layer to expose the mesa region of the n-doped layer of the mesa structure; forming a patterned second dielectric layer on the scattering mirror; growing an active layer on top of the mesa region of the n-doped layer of the mesa structure; growing a p-doped layer of the semiconductor material to cover a top surface and an upper portion of sidewalls of the active layer of the mesa structure; removing the patterned second dielectric layer to expose the scattering mirror; and forming electrodes over the p-doped layer and the n-doped layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A light emitting diode (LED) comprising:
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a substrate; an n-doped layer on the substrate, wherein the n-doped layer has a mesa region adjacent to a roughened region, wherein a top surface of the mesa region is higher than a top surface of the roughened region; an active layer disposed on top of the mesa region of the n-doped layer; a p-doped layer disposed on the active layer, wherein the p-doped layer caps a top surface and portions of sidewalls of the active layer; and electrodes disposed on the p-doped layer and the roughened region of the n-doped layer, wherein the roughened region of the n-doped layer scatters light emitted from the active layer. - View Dependent Claims (20)
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Specification