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METHOD OF FORMING E-FUSE IN REPLACEMENT METAL GATE MANUFACTURING PROCESS

  • US 20120129312A1
  • Filed: 11/22/2010
  • Published: 05/24/2012
  • Est. Priority Date: 11/22/2010
  • Status: Active Grant
First Claim
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1. A method of forming an electronic fuse comprising:

  • forming a polysilicon structure on top of a semiconductor substrate;

    implanting at least one dopant into said polysilicon structure to create a doped polysilicon layer in at least a top portion of said polysilicon structure;

    subjecting said doped polysilicon layer to a reactive-ion-etching (RIE) process, said doped polysilicon layer being substantially unaffected by said RIE process; and

    converting said polysilicon structure including said doped polysilicon layer into a silicide to form said electronic fuse.

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