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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20120132904A1
  • Filed: 11/16/2011
  • Published: 05/31/2012
  • Est. Priority Date: 11/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a first insulating layer in contact with the gate electrode layer;

    an oxide semiconductor layer in contact with the first insulating layer; and

    a second insulating layer in contact with the oxide semiconductor layer,wherein the oxide semiconductor layer has a wurtzite crystal structure and has a concentration gradient in which a nitrogen concentration is increased as a distance from the first insulating layer becomes shorter.

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