THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME

• US 20120132909A1
• Filed: 02/03/2012
• Published: 05/31/2012
• Est. Priority Date: 11/19/2008
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Saito, Nobuyoshi, Ueda, Tomomasa, Nakano, Shintaro, Uchikoga, Shuichi
• Granted Patent: US 8,525,182 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]

Abstract

A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

Claims

1. A display device comprising:

a thin film transistor including;

an insulating layer;

a gate electrode provided on the insulating layer;

a gate insulating film provided on the gate electrode;

a semiconductor layer provided on the gate electrode,

the semiconductor layer being formed of oxide;

a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and

a channel protecting layer including;

a first portion provided between the source electrode and the semiconductor layer,

a second portion provided between the drain electrode and the semiconductor layer, and

a third portion covering at least a part of a side face of a part of the semiconductor layer, the part of the semiconductor layer being not covered with the source electrode and the drain electrode above the gate electrode;

a pixel electrode connected to one of the source electrode and the drain electrode, the pixel electrode being formed of the oxide and having a lower electric resistance than the semiconductor layer; and

an optical element producing at least one of a change in optical characteristics and light emitting by an electric signal provided to the pixel electrode.

2. The device according to claim 1, wherein the pixel electrode is not covered with the channel protecting layer.

3. The device according to claim 1, wherein a concentration of oxygen contained in the pixel electrode is lower than a concentration of oxygen contained in the semiconductor layer.

4. The device according to claim 1, wherein the oxide in the pixel electrode has a columnar structure.

5. The device according to claim 1, further comprising

a film provided under the pixel electrode and formed of the same material as the gate insulating film,

a surface of the gate insulating film on a side of the semiconductor layer being smoother than a surface of the film on a side of the pixel electrode.

6. The device according to claim 5, wherein surface roughness of the surface of the film on the side of the pixel electrode is not less than five nanometers and not greater than ten nanometers.

7. The device according to claim 6, wherein the surface roughness of the surface of the gate insulating film on a side of the semiconductor layer is not less than 0.1 nanometers and not greater than one nanometer.

8. The device according to claim 1, further comprising:

a plurality of the thin film transistors and a plurality of the pixel electrodes, each of the plurality of the pixel electrodes being connected to one of the source electrode and the drain electrode of each of the plurality of the thin film transistors, the plurality of the thin film transistors and the plurality of the pixel electrodes being arranged in a matrix form;

a plurality of scanning lines, each of the plurality of the scanning lines being connected to gate electrodes of a plurality of the thin film transistors; and

a plurality of signal lines, each of the plurality of the signal lines being connected to another one of the source electrode and the drain electrode of a plurality of the thin film transistors.

9. The transistor according to claim 1, wherein the third portion covers at least the part of the side face of the semiconductor layer between an extension line of a side of the source electrode opposed to the drain electrode and an extension line of a side of the drain electrode opposed to the source electrode.

10. The transistor according to claim 9, wherein the third portion further covers an upper face of the semiconductor layer between the extension line of the side of the source electrode opposed to the drain electrode and the extension line of the side of the drain electrode opposed to the source electrode.

11. The transistor according to claim 1, wherein the channel protecting layer contains oxygen.

12. The transistor according to claim 1, wherein the semiconductor layer includes an amorphous oxide which contains Zn.

13. The transistor according to claim 12, wherein the amorphous oxide further contains at least one of In and Ga.