THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME
First Claim
1. A display device comprising:
- a thin film transistor including;
an insulating layer;
a gate electrode provided on the insulating layer;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate electrode,the semiconductor layer being formed of oxide;
a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and
a channel protecting layer including;
a first portion provided between the source electrode and the semiconductor layer,a second portion provided between the drain electrode and the semiconductor layer, anda third portion covering at least a part of a side face of a part of the semiconductor layer, the part of the semiconductor layer being not covered with the source electrode and the drain electrode above the gate electrode;
a pixel electrode connected to one of the source electrode and the drain electrode, the pixel electrode being formed of the oxide and having a lower electric resistance than the semiconductor layer; and
an optical element producing at least one of a change in optical characteristics and light emitting by an electric signal provided to the pixel electrode.
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Accused Products
Abstract
A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.
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Citations
13 Claims
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1. A display device comprising:
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a thin film transistor including; an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate electrode, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and a channel protecting layer including; a first portion provided between the source electrode and the semiconductor layer, a second portion provided between the drain electrode and the semiconductor layer, and a third portion covering at least a part of a side face of a part of the semiconductor layer, the part of the semiconductor layer being not covered with the source electrode and the drain electrode above the gate electrode; a pixel electrode connected to one of the source electrode and the drain electrode, the pixel electrode being formed of the oxide and having a lower electric resistance than the semiconductor layer; and an optical element producing at least one of a change in optical characteristics and light emitting by an electric signal provided to the pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification