THIN FILM TRANSISTOR HAVING A TWO-LAYER SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME
First Claim
1. A thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor layer formed of an oxide semiconductor, a source electrode, a drain electrode and a protective layer,wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, andwherein the semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer, the second layer being provided on the protective layer side of the semiconductor layer, and the second layer has a mass density not larger than the mass density of the first layer.
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Abstract
A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.
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Citations
5 Claims
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1. A thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor layer formed of an oxide semiconductor, a source electrode, a drain electrode and a protective layer,
wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, and wherein the semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer, the second layer being provided on the protective layer side of the semiconductor layer, and the second layer has a mass density not larger than the mass density of the first layer.
Specification