OXIDE MEMS BEAM

• US 20120133006A1
• Filed: 11/29/2010
• Published: 05/31/2012
• Est. Priority Date: 11/29/2010
• Status: Abandoned Application

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hasselbach, Joseph P., Lestage, Karen L., Stamper, Anthony K.
• Application Number:
  US12/955,220
• Publication Number:
  US 20120133006A1
• Time in Patent Office: Days
• US Class Current: 257/418
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping

Abstract

In one embodiment, a semiconductor structure includes a beam positioned within a sealed cavity, the beam including: an upper insulator layer including one or more layers; and a lower insulator layer including one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer, such that the beam bends.

Claims

1. A semiconductor structure, comprising:

a beam positioned within a sealed cavity, the beam comprising;

an upper insulator layer comprising one or more layers; and

a lower insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer, such that the beam bends.

2. The semiconductor structure of claim 1, wherein the composite stress of the upper insulator layer is more tensile or less compressive than the composite stress of the lower insulator layer, such that the beam bends downward.

3. The semiconductor structure of claim 1, wherein the composite stress of the lower insulator layer is more tensile or less compressive than the composite stress of the upper insulator layer, such that the beam bends upward.

4. The semiconductor structure of claim 1, further comprising an upper conductor layer and a lower conductor layer, each conductor layer comprising one or more metal layers, wherein the upper insulator layer and the lower insulator layer are between the upper conductor layer and the lower conductor layer.

5. The semiconductor structure of claim 4, further comprising a conductive via through the upper insulator layer and the lower insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.

6. The semiconductor structure of claim 4, further comprising a stabilizing insulator layer adjacent to at least one of:

the upper insulator layer or the lower insulator layer, wherein the at least one of the upper insulator layer or the lower insulator layer includes an unstable stress when exposed to ambient.

7. The semiconductor structure of claim 6, wherein the stabilizing insulator layer includes a stable compressive stress.

8. The semiconductor structure of claim 6, wherein the upper insulator layer, the lower insulator layer, and the stabilizing insulator layer include silicon dioxide.

9. The semiconductor structure of claim 6, wherein the stabilizing insulator layer is at least approximately 50 nanometers thick.

10. A semiconductor structure, comprising:

a beam positioned within a sealed cavity, the beam comprising;

a first stabilizing insulator layer;

an insulator layer above the first stabilizing insulator layer, the insulator layer including an unstable stress when exposed to ambient; and

a second stabilizing insulator layer above the insulator layer, wherein the first stabilizing insulator layer and the second stabilizing insulator layer include a stable stress when exposed to ambient.

11. The semiconductor structure of claim 10, wherein at least one of:

the first stabilizing insulator layer, the insulator layer, or the second stabilizing insulator layer include one or more layers.

12. The semiconductor structure of claim 10, further comprising an upper conductor layer and a lower conductor layer, each conductor layer including one or more metal layers, wherein the first stabilizing insulator layer, the insulator layer, and the second stabilizing insulator layer are between the upper conductor layer and the lower conductor layer.

13. The semiconductor structure of claim 12, further comprising a conductive via through the insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.

14. The semiconductor structure of claim 12, wherein all surfaces of the insulator layer are covered by the first stabilizing insulator layer and the second stabilizing insulator layer.

15. The semiconductor structure of claim 10, wherein the first stabilizing insulator layer and the second stabilizing insulator layer include a stable compressive stress.

16. The semiconductor structure of claim 10, wherein the first stabilizing insulator layer, the insulator layer, and the second stabilizing insulator layer include silicon dioxide.

17. The semiconductor structure of claim 10, wherein the first stabilizing insulator layer and the second stabilizing insulator layer are at least approximately 50 nanometers thick.

18. A semiconductor structure, comprising:

a beam positioned within a sealed cavity, the beam comprising;

an upper conductor layer comprising one or more metal layers;

a lower conductor layer comprising one or more metal layers; and

an insulator layer between the upper conductor layer and the lower conductor layer, wherein at least one of;

a stress, a thickness, or a pattern factor of the upper conductor layer is different than a stress, a thickness, or a pattern factor of the lower conductor layer, such that the beam bends.

19. The semiconductor structure of claim 18, further comprising a conductive via through the insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.

20. The semiconductor structure of claim 18, wherein the stress of the upper conductor layer is more tensile or less compressive than the stress of the lower conductor layer, such that the beam bends downward.

21. The semiconductor structure of claim 18, wherein the stress of the upper conductor layer is less tensile or more compressive than the stress of the lower conductor layer, such that the beam bends upward.

22. The semiconductor structure of claim 18, wherein the insulator layer includes silicon dioxide.