METHOD OF NANOSTRUCTURING A FILM OR A WAFER OF MATERIAL OF THE METAL OXIDE OR SEMI-CONDUCTOR TYPE

• US 20120133029A1
• Filed: 05/12/2010
• Published: 05/31/2012
• Est. Priority Date: 05/14/2009
• Status: Abandoned Application

• Current Assignee: Universite de Technologie de Troyes
• Original Assignee: Universite de Technologie de Troyes
• Inventors: Lerondel, Gilles, Divay, Laurent
• Application Number:
  US13/319,755
• Publication Number:
  US 20120133029A1
• Time in Patent Office: Days
• US Class Current: 257/618
• CPC Class Codes: C30B 19/103 Current controlled or induced growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: C30B 29/62 Whiskers or needles
• CPC Class Codes: C30B 7/005 Epitaxial layer growth
• CPC Class Codes: G03H 1/0244 Surface relief holograms replicating hologram without interference recording G03H1/0276
• CPC Class Codes: G03H 2001/0268 Inorganic recording material, e.g. photorefractive crystal [PRC]
• CPC Class Codes: G03H 2001/0413 for recording transmission holograms
• CPC Class Codes: G03H 2001/0432 Constrained record wherein, during exposure, the recording means undergoes constrains substantially differing from those expected at reconstruction
• CPC Class Codes: G03H 2210/63 Environment affecting the recording, e.g. underwater G03H2001/0432 takes precedence
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469

Abstract

A method for nanostructuring a film (2) of material includes a step of immersing the film (2) of material in an aqueous solution (3), during which an interference FIG. 6) including illuminated areas (6b) and dark areas (6a) is applied to at least one of the faces of the film (2). The material is a semiconductor inorganic material or oxide, which is able to be solubilised in aqueous solution under the effect of the absorption of light. The nanostructuring of the film (2) is effected, at its surface in contact with the aqueous solution (3), by photodissolution in the illuminated areas (6a) and/or by growth in the dark areas (6b) of the interference FIG. 6). Also described is a nanostructured coating film (5) obtained according to such a preparation method, as well as a nanostructured 3D film.

Claims

1. A method for nanostructuring a film of material (2), comprising a step of immersing said film of material (2) in an aqueous solution (3), during which there is applied, to at least one of the faces of the film (2), an interference FIG. (6) comprising illuminated areas (6b) and dark areas (6a),

said method being characterised in that:

said material is a semiconductor inorganic material or oxide, which is able to be solubilised in an aqueous solution under the effect of the absorption of light, and

the nanostructuring of the film or wafer of material (2) takes place, at the surface of the film (2) in contact with the aqueous solution (3), by photodissolution in said illuminated areas (6a) and/or by growth in said dark areas of said interference FIG. 6).

2. A method according claim 1, characterised in that the material (2) is non-porous.

3. A method according to claim 1, characterised in that the material (2) has a prohibited band energy in a wavelength domain corresponding to ultraviolet.

4. A method according to claim 1, characterised in that the material (2) comprising zinc oxide.

5. A method according to claim 1, characterised in that the nanostructuring of the film or wafer (2) takes place by photodissolution in the illuminated areas (6b) of the interference FIG. 6), in an aqueous solution the pH of which is between 6 and 12.

6. A nanostructured coating film (5) able to be obtained according to a preparation method as defined in claim 1.

8. A method according to claim 2, characterised in that the material (2) has a prohibited band energy in a wavelength domain corresponding to ultraviolet.

9. A method according to claim 2, characterised in that the material (2) comprising zinc oxide.

10. A method according to claim 3, characterised in that the material (2) comprising zinc oxide.

11. A method according to claim 2, characterised in that the nanostructuring of the film or wafer (2) takes place by photodissolution in the illuminated areas (6b) of the interference FIG. 6), in an aqueous solution the pH of which is between 6 and 12.

12. A method according to claim 3, characterised in that the nanostructuring of the film or wafer (2) takes place by photodissolution in the illuminated areas (6b) of the interference FIG. 6), in an aqueous solution the pH of which is between 6 and 12.

13. A method according to claim 4, characterised in that the nanostructuring of the film or wafer (2) takes place by photodissolution in the illuminated areas (6b) of the interference FIG. 6), in an aqueous solution the pH of which is between 6 and 12.

14. A nanostructured coating film (5) able to be obtained according to a preparation method as defined in claim 2.

15. A nanostructured coating film (5) able to be obtained according to a preparation method as defined in claim 3.

16. A nanostructured coating film (5) able to be obtained according to a preparation method as defined in claim 4.

17. A nanostructured coating film (5) able to be obtained according to a preparation method as defined in claim 5.

7. A three-dimensional nanostructured coating film (5).