METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD

• US 20120133450A1
• Filed: 11/29/2011
• Published: 05/31/2012
• Est. Priority Date: 07/25/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: BAIK, Chan Wook, KIM, Jong Seok, JUN, Seong Chan, KIM, Sun Il, KIM, Jong Min, JUN, Chan Bong, LEE, Sang Hun
• Granted Patent: US 8,514,027 B2
• Time in Patent Office: Days
• US Class Current: 331/154
• CPC Class Codes: H01P 11/003 Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

Claims

1. A terahertz oscillator having the construction comprising two or more structures bonded to each other manufactured by a method of multi-stage substrate etching, the method comprising the steps of:

forming a hole by etching a first substrate using, as an etching mask, a first mask pattern formed on any one surface of the first substrate;

bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched;

forming a second mask pattern on the second substrate bonded;

forming a hole by etching the second substrate using the second mask pattern as an etching mask; and

removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

2. The terahertz oscillator according to claim 1, wherein the construction comprising two or more structures bonded to each other is provided such that the two or more structures are aligned by using the alignment key patterns formed on the structures, and bonded to each other by a silicon direct bonding process.