DEEP-TRENCH SILICON ETCHING AND GAS INLET SYSTEM THEREOF

• US 20120138228A1
• Filed: 08/19/2010
• Published: 06/07/2012
• Est. Priority Date: 08/27/2009
• Status: Abandoned Application

• Current Assignee: Beijing MNC Co., Ltd.
• Original Assignee: Beijing Nmc Co., Ltd.
• Inventors: Zhou, Yang
• Application Number:
  US13/321,794
• Publication Number:
  US 20120138228A1
• Time in Patent Office: Days
• US Class Current: 156/345.29
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: Y10T 137/8593 Systems

Abstract

A deep-trench silicon etching apparatus, including a reaction chamber and a gas source cabinet, the gas source cabinet is connected to the reaction chamber via two independently controlled gas paths; wherein, a first gas path is used to introduce process gas for etch step from the gas source cabinet into the reaction chamber; a second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber. The present invention is used to solve the problems of gas mixture and gas delay occurring when process steps are switched.

Claims

1. A deep-trench silicon etching apparatus comprising:

a reaction chamber; and

a gas source cabinet;

a first gas path, and

a second gas path, the second gas path being independently controlled from the first gas path;

the gas source cabinet being connected to the reaction chamber by the two independently controlled gas paths;

wherein, the first gas path is used to introduce process gas for an etch step from the gas source cabinet into the reaction chamber; and

the second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber.

2. The deep-trench silicon etching apparatus according to claim 1, further comprising a gas inlet nozzle communicating with the reaction chamber;

each of the first and second independently controlled gas paths include a gas inlet pipeline communicating with the reaction chamber by the gas inlet nozzle; and

first of the two gas inlet pipelines is connected to the process gas source for the etch step and a second of the two gas inlet pipelines is connected to the process gas for the deposition step and both gas inlet pipelines are connected to the reaction chamber via the gas inlet nozzle.

3. The deep-trench silicon etching apparatus according to claim 2, wherein

the gas inlet nozzle includes an inner layer nozzle and an outer layer nozzle;

and

a one of the two gas inlet pipelines being connected to the inner layer nozzle and another of the two gas inlet pipelines being connected to the outer layer nozzle.

4. The deep-trench silicon etching apparatus according to claim 3, wherein

the inner layer nozzle is a central through hole within the gas inlet nozzle, one end of the central through hole is connected to the first gas inlet pipeline, and the other end thereof is connected into the reaction chamber;

and

the outer layer nozzle includes a gas inlet hole connected to the second gas inlet pipeline, a homogenizing chamber connected to the gas inlet hole, flow division holes connected to the homogenizing chamber, and a gas outlet channel connected to the flow division holes.

5. The deep-trench silicon etching apparatus according to claim 4, wherein

an axis of the gas inlet hole of the outer layer nozzle is perpendicular to an axis of the through hole of the inner layer nozzle;

the homogenizing chamber of the outer layer nozzle is a first hollow ring surrounding the through hole of the inner layer nozzle;

the gas outlet channel of the outer layer nozzle is anther a second hollow ring surrounding the through hole of the inner layer nozzle and connected to the reaction chamber.

6. The deep-trench silicon etching apparatus according to claim 2, wherein

the gas inlet nozzle includes an intermediate nozzle and a flow homogenizing board;

one end of the intermediate nozzle is connected to the first gas inlet pipeline and the other end thereof is connected into the reaction chamber;

the flow homogenizing board with includes a gas inlet hole, a homogenizing chamber and gas outlet holes thereon, wherein, the gas inlet hole is connected to the second gas inlet pipeline.

7. A gas inlet system of a deep-trench silicon etching comprising:

a gas source cabinet;

a reaction chamber; and

a first gas path;

a second gas path, independently controlled from the first gas path, each of the first gas path and second gas path being connected between the gas source cabinet and the reaction chamber;

wherein, the first gas path is used to introduce a process gas for an etch step from the gas source cabinet into the reaction chamber; and

the second gas path is used to introduce a process gas for a deposition step from the gas source cabinet into the reaction chamber.

8. The gas inlet system according to claim 7, further comprising:

a gas inlet nozzle;

the gas path including a first gas inlet pipeline, the gas path including a second gas inlet pipeline;

the first gas inlet pipeline being connected to the process gas for the etch step and the second gas inlet pipeline being connected to the process gas for the deposition step, and both the first gas inlet pipeline and second gas inlet pipeline are connected to the reaction chamber via the gas inlet nozzle.

9. The gas inlet system according to claim 8, wherein characterized in that the gas inlet nozzle includes an inner layer nozzle and an outer layer nozzle;

and

the inner layer nozzle and the outer layer nozzle are connected to the two gas inlet pipelines respectively.

10. The gas inlet system according to claim 9, wherein

the inner layer nozzle is a central through hole within the gas inlet nozzle, one end of the central through hole is connected to the first gas inlet pipeline, and the other end thereof is connected into the reaction chamber;

the outer layer nozzle includes a gas inlet hole connected to the second gas inlet pipeline, a homogenizing chamber connected to the gas inlet hole, flow division holes connected to the homogenizing chamber, and a gas outlet channel connected to the flow division holes.

11. The gas inlet system according to claim 10, wherein

an axis of the gas inlet hole of the outer layer nozzle is perpendicular to an axis of the through hole of the inner layer nozzle;

the homogenizing chamber of the outer layer nozzle is a first hollow ring surrounding the through hole of the inner layer nozzle;

the gas outlet channel of the outer layer nozzle is a second hollow ring surrounding the through hole of the inner layer nozzle and connected to the reaction chamber.

12. The gas inlet system according to claim 8, wherein

the gas inlet nozzle includes an intermediate nozzle and a flow homogenizing board;

one end of the intermediate nozzle is connected to the first gas inlet pipeline and the other end thereof is connected into the reaction chamber;

the flow homogenizing board is provided with a gas inlet hole, a homogenizing chamber and gas outlet holes thereon, and the gas inlet hole is connected to the second gas inlet pipeline.