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DEEP-TRENCH SILICON ETCHING AND GAS INLET SYSTEM THEREOF

  • US 20120138228A1
  • Filed: 08/19/2010
  • Published: 06/07/2012
  • Est. Priority Date: 08/27/2009
  • Status: Abandoned Application
First Claim
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1. A deep-trench silicon etching apparatus comprising:

  • a reaction chamber; and

    a gas source cabinet;

    a first gas path, anda second gas path, the second gas path being independently controlled from the first gas path;

    the gas source cabinet being connected to the reaction chamber by the two independently controlled gas paths;

    wherein, the first gas path is used to introduce process gas for an etch step from the gas source cabinet into the reaction chamber; and

    the second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber.

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