SOLAR FUELS GENERATOR

• US 20120138456A1
• Filed: 12/06/2011
• Published: 06/07/2012
• Est. Priority Date: 12/06/2010
• Status: Abandoned Application

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Spurgeon, Joshua M., Lewis, Nathan S.
• Application Number:
  US13/312,567
• Publication Number:
  US 20120138456A1
• Time in Patent Office: Days
• US Class Current: 204/252
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: C25B 13/08 based on organic materials
• CPC Class Codes: C25B 9/19 with diaphragms
• CPC Class Codes: H01L 31/04 adapted as photovoltaic [PV] conversion devices testing thereof during manufacture H01L22/00; testing thereof after manufacture H02S50/10
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The solar fuels generator includes photoanodes that each extends outward from a first side of a membrane. The generator also includes photocathodes that each extends outward from a second side of the membrane. The photocathodes each includes a p-type semiconductor and the photoanodes each includes an n-type semiconductor. The p-type semiconductors are in electrical communication with the n-type semiconductors.

Claims

1. A solar fuel generator, comprising:

photoanodes extending outward from a first side of a membrane, the photoanodes each including an n-type semiconductor; and

photocathodes extending outward from a second side of the membrane, the photocathodes each including a p-type semiconductor,

the p-type semiconductors being in electrical communication with the n-type semiconductors.

2. The generator of claim 1, wherein the membrane includes multiple layers of material.

3. The generator of claim 2, wherein the n-type semiconductors each extend into an anode layer of the membrane and the p-type semiconductors each extends into a cathode layer of the membrane.

4. The generator of claim 3, wherein the membrane includes an intermediate layer between the anode layer and the cathode layer.

5. The generator of claim 4, wherein the intermediate layer is more electrically conducting than the cathode layer, and

the intermediate layer is more electrically conducting than the anode layer.

6. The generator of claim 4, wherein the n-type semiconductors each physically contacts the intermediate layer, and

the p-type semiconductors each physically contacts the intermediate layer.

7. The generator of claim 4, wherein the n-type semiconductors each extends through the anode layer, and

the p-type semiconductors each extends through the cathode layer.

8. The generator of claim 7, wherein a ratio of a thickness of the anode layer:

a thickness of the intermediate layer is greater than 5;

1 and a thickness of the cathode layer;

a thickness of the intermediate layer is greater than 5;

1.

9. The generator of claim 4, wherein the intermediate layer includes one or more ionomers.

10. The generator of claim 9, wherein the one or more ionomers includes poly(3,4-ethylenedioxythiophene):

poly(styrene sulfonate).

11. The generator of claim 1, wherein the n-type semiconductors have an average length:

width ratio greater than 5;

1, and

the p-type semiconductors have an average length;

width ratio greater than 5;

1.

12. The generator of claim 1, wherein the n-type semiconductors each extend into an anode layer of the membrane,

the anode layer includes a cationically conductive ionomer.

13. The generator of claim 12, wherein the ionomer is a copolymers of a substituted or unsubstituted alkylene and a sulfonic acid.

14. The generator of claim 1, wherein the p-type semiconductors each extends into a cathode layer of the membrane, the cathode layer includes an ionomer.

15. The generator of claim 14, wherein the ionomer is an anionically conductive poly(arylene ether sulfone).

16. The generator of claim 15, wherein the poly(arylene ether sulfone) is represented by the following Formula II:

17. The generator of claim 1, wherein a bandgap of the n-type semiconductors is larger than a bandgap of the p-type semiconductors.

18. The generator of claim 1, wherein the p-type semiconductors include p-type silicon, the n-type semiconductors include a metal oxide, and the membrane is ionically conducting while being impermeable to H₂ and O₂, and optically transparent.

19. The generator of claim 1, wherein a portion of a length of each n-type semiconductor is embedded in the membrane while a remaining portion of the length of each n-type semiconductor is located outside of the membrane and an average percentage of the n-type semiconductor length embedded in the membrane is greater than 10%, and

a portion of a length of each p-type semiconductor is embedded in the membrane while a remaining portion of the length of each p-type semiconductor is located outside of the membrane and an average percentage of the p-type semiconductor length embedded in the membrane is greater than 10%.

20. A method of forming a solar fuel generator, comprising:

generating an anode precursor that includes photoanodes extending outward from an anode layer, the photoanodes each including an n-type semiconductor;

generating a cathode precursor that includes photocathodes extending outward from a cathode layer, the photoacathodes each including a p-type semiconductor; and

bonding the anode layer to the cathode layer with an intermediate layer that provides electrical communication between the n-type semiconductors and the p-type semiconductors.