Semiconductor light emitting element
First Claim
1. A semiconductor light emitting element, comprising:
- a semiconductor multilayer structure comprising a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer; and
a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer,wherein the light is extracted in a direction from the light emitting layer toward the first conductive type layer,the first conductive type layer comprises a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, andat least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
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Abstract
A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
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Citations
6 Claims
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1. A semiconductor light emitting element, comprising:
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a semiconductor multilayer structure comprising a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer; and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer, wherein the light is extracted in a direction from the light emitting layer toward the first conductive type layer, the first conductive type layer comprises a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification