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Semiconductor light emitting element

  • US 20120138984A1
  • Filed: 10/05/2011
  • Published: 06/07/2012
  • Est. Priority Date: 12/06/2010
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting element, comprising:

  • a semiconductor multilayer structure comprising a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer; and

    a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer,wherein the light is extracted in a direction from the light emitting layer toward the first conductive type layer,the first conductive type layer comprises a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, andat least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

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