Semiconductor light emitting element

• US 20120138984A1
• Filed: 10/05/2011
• Published: 06/07/2012
• Est. Priority Date: 12/06/2010
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Kamiya, Masao, Deguchi, Masashi
• Granted Patent: US 9,024,342 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

Claims

1. A semiconductor light emitting element, comprising:

a semiconductor multilayer structure comprising a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer; and

a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer,

wherein the light is extracted in a direction from the light emitting layer toward the first conductive type layer,

the first conductive type layer comprises a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and

at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

2. The semiconductor light emitting element according to claim 1, further comprising:

a translucent substrate that is in contact with the surface of the first conductive type layer with the concavo-convex region formed thereon.

3. The semiconductor light emitting element according to claim 2, wherein at least a part of the semiconductor multilayer structure is formed extending to above an edge of the translucent substrate.

4. The semiconductor light emitting element according to claim 1, further comprising:

an insulating layer formed between the reflecting layer and the second conductive type layer.

5. The semiconductor light emitting element according to claim 4. wherein a side surface of a part of the reflecting layer formed right above an edge of the first conductive type layer is not covered with the insulating layer.

6. The semiconductor light emitting element according to claim 1, wherein the concavo-convex region is formed on a whole area of the surface of the first conductive type layer.