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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20120139047A1
  • Filed: 02/27/2011
  • Published: 06/07/2012
  • Est. Priority Date: 11/29/2010
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising a substrate, a channel region in the substrate, source/drain regions on both sides of the channel region, a gate structure on the channel region, and gate sidewall spacers formed on both sidewalls of the gate structure, characterized in that:

  • each of the source/drain regions comprises epitaxially grown metal silicide, and a dopant segregation region is formed at the interface between each of the source/drain regions and the channel region.

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