MEMS SENSOR AND METHOD FOR PRODUCING MEMS SENSOR, AND MEMS PACKAGE
First Claim
1. A capacitance type gyro sensor comprising:
- a semiconductor substrate having a cavity inside by forming an upper wall and a bottom wall, and having a surface portion forming the upper wall of the cavity and a back surface portion forming the bottom wall;
a first electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a first base portion and first comb tooth portions extending from the first base portion and aligned at intervals like comb teeth; and
a second electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a second base portion and second comb tooth portions extending from the second base portion toward the portions between the first comb tooth portions and aligned like comb teeth to engage with the first comb tooth portions at an interval, where the first electrode or the second electrode are driven up and down with respect to the other electrode and an angular velocity applied at the time of this driving is detected by detecting a change in capacitance between the first comb tooth portion and the second comb tooth portion, whereinthe first electrode includes first drive portions extending from opposed portions opposed to the second comb tooth portions of the first base portion toward the second comb tooth portions, and electrically insulated from other portions of the first base portion,the second electrode includes second drive portions formed on the tip end portions of the second comb tooth portions opposed to the first drive portions so as to be electrically insulated from other portions of the second comb tooth portions, andthe first drive portions and the second drive portions engage with each other at an interval like comb teeth.
1 Assignment
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Accused Products
Abstract
A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
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Citations
69 Claims
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1. A capacitance type gyro sensor comprising:
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a semiconductor substrate having a cavity inside by forming an upper wall and a bottom wall, and having a surface portion forming the upper wall of the cavity and a back surface portion forming the bottom wall; a first electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a first base portion and first comb tooth portions extending from the first base portion and aligned at intervals like comb teeth; and a second electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a second base portion and second comb tooth portions extending from the second base portion toward the portions between the first comb tooth portions and aligned like comb teeth to engage with the first comb tooth portions at an interval, where the first electrode or the second electrode are driven up and down with respect to the other electrode and an angular velocity applied at the time of this driving is detected by detecting a change in capacitance between the first comb tooth portion and the second comb tooth portion, wherein the first electrode includes first drive portions extending from opposed portions opposed to the second comb tooth portions of the first base portion toward the second comb tooth portions, and electrically insulated from other portions of the first base portion, the second electrode includes second drive portions formed on the tip end portions of the second comb tooth portions opposed to the first drive portions so as to be electrically insulated from other portions of the second comb tooth portions, and the first drive portions and the second drive portions engage with each other at an interval like comb teeth. - View Dependent Claims (2, 3, 4)
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5. A capacitance type gyro sensor comprising:
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a semiconductor substrate having a cavity inside by forming an upper wall and a bottom wall, and having a surface portion forming the upper wall of the cavity and a back surface portion forming the bottom wall; a first electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a first base portion and first comb tooth portions extending from the first base portion and aligned at intervals like comb teeth; a second electrode formed by processing the surface portion of the semiconductor substrate, and integrally having a second base portion and second comb tooth portions extending from the second base portion toward the portions between the first comb tooth portions and aligned like comb teeth to engage with the first comb tooth portions at an interval; a first contact wiring that is formed on the surface portion of the semiconductor substrate and comes into direct contact with the first electrode from the surface side; and a second contact wiring that is formed on the surface portion of the semiconductor substrate, and comes into direct contact with the second electrode from the surface side, wherein the first electrode includes first drive portions extending from opposed portions opposed to the second comb tooth portions of the first base portion toward the second comb tooth portions, the second electrode includes second drive portions formed on the tip end portions of the second comb tooth portions opposed to the first drive portions so as to be electrically insulated from other portions of the second comb tooth portions, and the first drive portions and the second drive portions engage with each other at an interval like comb teeth. - View Dependent Claims (6, 7, 8, 9)
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10. A capacitance type acceleration sensor comprising:
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a semiconductor substrate having a cavity inside by forming an upper wall and a bottom wall, and having a surface portion forming the upper wall of the cavity and a back surface portion forming the bottom wall; and a first electrode and a second electrode that are formed by processing the surface portion of the semiconductor substrate and have comb-tooth-like shapes to engage with each other at an interval, where acceleration applied when the first electrode or the second electrode moves up and down with respect to the other electrode is detected by detecting a change in capacitance between the first electrode and the second electrode, wherein the first electrode includes dielectric layers that have a predetermined thickness from the surface or the back surface to a halfway point of the first electrode along the thickness direction orthogonal to the opposing direction of the second electrode and have a predetermined width along the opposing direction, and conductive layers consisting of remaining portions except for the dielectric layers. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for manufacturing a MEMS sensor comprising the steps of:
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forming a recess dug to a halfway point in the thickness direction of a semiconductor substrate by selectively etching the surface layer portion of a sensor region of the semiconductor substrate having the sensor region and a peripheral region surrounding the sensor region, and concurrently, forming a comb-tooth-like fixed electrode and movable electrode that engage with each other via the recess; forming a sacrifice layer that covers the sensor region and exposes the peripheral region; forming a protective layer made of a first inorganic material on the semiconductor substrate so that a peripheral edge portion of the protective layer is bonded to the peripheral region and the central portion surrounded by the peripheral edge portion covers the sacrifice layer; forming a space between the protective layer and the sensor region by removing the sacrifice layer directly below the protective layer; and forming a cavity by linking the lower portions of the fixed electrode and the movable electrode to each other by isotropic etching by supplying an etching medium into the recess after removing the sacrifice layer. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A MEMS sensor comprising:
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a semiconductor substrate having a sensor region and a peripheral region surrounding the sensor region and having a cavity formed directly below a surface layer portion of the sensor region; a comb-tooth-like fixed electrode and movable electrode that are formed by processing the surface layer portion of the sensor region and engage with each other at an interval; and a protective layer made of a first inorganic material that has a peripheral edge portion bonded to the peripheral region of the semiconductor substrate and a central portion surrounded by the peripheral edge portion and covering the fixed electrode and the movable electrode while being spaced from the sensor region. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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31. A MEMS package comprising:
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a MEMS sensor including; a semiconductor substrate having a sensor region and a peripheral region surrounding the sensor region and having a cavity formed directly below a surface layer portion of the sensor region, a comb-tooth-like fixed electrode and movable electrode that are formed by processing the surface layer portion of the sensor region and engage with each other at an interval, and a protective layer made of a first inorganic material that has a peripheral edge portion bonded to the peripheral region of the semiconductor substrate and a central portion surrounded by the peripheral edge portion and covering the fixed electrode and the movable electrode while being spaced from the sensor region; and a resin package formed to cover the MEMS sensor. - View Dependent Claims (32, 33)
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34. A method for manufacturing a MEMS sensor comprising the steps of:
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selectively forming a lower electrode on a semiconductor substrate; laminating an electrode coating film made of a material having etching selectivity to polysilicon on the semiconductor substrate so as to coat the lower electrode; selectively forming a sacrifice polysilicon layer on the electrode coating film; laminating a sacrifice oxide film on the electrode coating film so as to coat the sacrifice polysilicon layer; forming an electrode polysilicon layer on the sacrifice oxide film; forming an upper electrode by selectively etching the electrode polysilicon layer; forming a protective film having etching selectivity to polysilicon so as to cover side walls of the upper electrode; exposing the sacrifice polysilicon layer by removing portions of the sacrifice oxide film; and forming a cavity directly below the upper electrode by removing the exposed sacrifice polysilicon layer. - View Dependent Claims (35, 36, 37, 38, 39)
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40. A MEMS sensor comprising:
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a semiconductor substrate; and a polysilicon layer including; a lower electrode selectively formed on the semiconductor substrate, an electrode coating film made of an insulating material and formed on the semiconductor substrate so as to coat the lower electrode, and an upper electrode formed at an interval above the electrode coating film and opposed to the lower electrode via the electrode coating film. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48)
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49. A MEMS package comprising:
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a MEMS sensor including; a semiconductor substrate, a lower electrode selectively formed on the semiconductor substrate, an electrode coating film made of an insulating material and formed on the semiconductor substrate so as to coat the lower electrode, and a polysilicon layer having an upper electrode formed at an interval above the electrode coating film and opposed to the lower electrode via the electrode coating film; and a resin package formed to cover the MEMS sensor. - View Dependent Claims (50, 51)
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52. A method for manufacturing a MEMS sensor comprising the steps of:
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forming a base film made of a material having etching selectivity to Si on a Si substrate; forming a polysilicon layer on the base film; forming trenches from the surface of the polysilicon layer to the surface of the Si substrate by selectively etching the polysilicon layer and the base film and concurrently, forming a comb-tooth-like first electrode and second electrode that have a lamination structure including the base film and the polysilicon layer and engage with each other via the trenches; and forming a cavity directly below the base film by etching portions directly below the base film of the Si substrate by isotropic etching by supplying an etching medium into the trenches. - View Dependent Claims (53, 54, 55, 56)
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57. A MEMS sensor comprising:
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a Si substrate having a surface layer portion on which a recess is formed; and a comb-tooth-like first electrode and second electrode that are disposed directly above the recess of the Si substrate and have a lamination structure including a base film made of an insulating material and a polysilicon layer laminated in order from the side close to the recess, and engage with each other at an interval. - View Dependent Claims (58, 59, 60, 61, 62, 63, 64, 65, 66)
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67. A MEMS package comprising:
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a MEMS sensor including; a Si substrate having a surface layer portion on which a recess is formed, and a comb-tooth-like first electrode and second electrode that are disposed directly above the recess of the Si substrate and have a lamination structure including a base film made of an insulating material and a polysilicon layer laminated in order from the side close to the recess, and engage with each other at an interval; and a resin package formed to cover the MEMS sensor. - View Dependent Claims (68, 69)
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Specification