DC-DC CONVERTER AND MANUFACTURING METHOD THEREOF
First Claim
1. A DC-DC converter comprising:
- an input terminal to which input voltage is applied;
a voltage converter circuit that is connected to the input terminal and includes a first transistor;
a control circuit that is configured to control the voltage converter circuit and includes a second transistor including a silicon material in a channel formation region; and
a third transistor that is provided between the input terminal and the control circuit and configured to convert the input voltage into power supply voltage that is lower than the input voltage,wherein the first transistor and the third transistor are transistors including an oxide semiconductor material in channel formation regions, andwherein the first transistor and the third transistor are stacked over the second transistor with an insulating film provided between the first and third transistors and the second transistor.
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Accused Products
Abstract
A DC-DC converter is driven by single high input voltage, and includes a voltage converter circuit and a control circuit. The increase of the occupied area of the DC-DC converter is suppressed. The DC-DC converter includes an input terminal to which input voltage is applied; a voltage converter circuit connected to the input terminal, and including a first transistor; a control circuit configured to control the voltage converter circuit, and including a second transistor including a silicon material in a channel formation region; and a third transistor provided between the input terminal and the control circuit, and configured to convert the input voltage into power supply voltage that is lower than the input voltage. The first transistor and the third transistor include an oxide semiconductor material in channel formation regions. The first transistor and the third transistor are stacked over the second transistor with an insulating film provided therebetween.
17 Citations
10 Claims
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1. A DC-DC converter comprising:
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an input terminal to which input voltage is applied; a voltage converter circuit that is connected to the input terminal and includes a first transistor; a control circuit that is configured to control the voltage converter circuit and includes a second transistor including a silicon material in a channel formation region; and a third transistor that is provided between the input terminal and the control circuit and configured to convert the input voltage into power supply voltage that is lower than the input voltage, wherein the first transistor and the third transistor are transistors including an oxide semiconductor material in channel formation regions, and wherein the first transistor and the third transistor are stacked over the second transistor with an insulating film provided between the first and third transistors and the second transistor. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a DC-DC converter, comprising the steps of:
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forming a first transistor using a silicon material in a first channel formation region, over an insulating surface; forming an insulating film covering the first transistor; and forming a second transistor including an oxide semiconductor material in a second channel formation region and a third transistor using the oxide semiconductor material in a third channel formation region over the insulating film, wherein a voltage converter circuit includes the second transistor, wherein a control circuit configured to control the voltage converter circuit includes the first transistor, and wherein the third transistor is provided between an input terminal and the control circuit, and converts input voltage applied to the input terminal into power supply voltage that is lower than the input voltage. - View Dependent Claims (7, 8, 9, 10)
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Specification