SUBSTRATE SUPPORTS FOR SEMICONDUCTOR APPLICATIONS
First Claim
1. A substrate support comprising (i) a base body;
- (ii) one or more conductive members disposed on or within the base body; and
(iii) a dielectric multilayer formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body;
wherein the dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body; and
(b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer;
wherein (i′
) the topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent, and (ii′
) the topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer.
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0 Petitions
Accused Products
Abstract
This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.
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Citations
23 Claims
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1. A substrate support comprising (i) a base body;
- (ii) one or more conductive members disposed on or within the base body; and
(iii) a dielectric multilayer formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body;
wherein the dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body; and
(b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer;
wherein (i′
) the topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent, and (ii′
) the topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
- (ii) one or more conductive members disposed on or within the base body; and
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22. A method for producing a substrate support comprising (a) providing a base body, and one or more conductive members disposed on or within the base body;
- and (b) forming a dielectric multilayer on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body;
wherein the dielectric multilayer comprises (i) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body; and
(ii) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer;
wherein (a′
) the topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent, and (b′
) the topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer.
- and (b) forming a dielectric multilayer on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body;
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23. A method for producing an electronic device, said method comprising:
- (a) providing an electrostatic chuck comprising (i) a base body;
(ii) one or more conductive members disposed on or within the base body; and
(iii) a dielectric multilayer formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body;
wherein the dielectric multilayer comprises (a′
) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on at least a portion of the base body, or on the one or more conductive members disposed on the base body and at least a portion of the base body; and
(b′
) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer;
wherein (i′
) the topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent, and (ii′
) the topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer;
(b) providing a workpiece overlying the work surface;
(c) providing a voltage across the electrostatic chuck and the workpiece to maintain the workpiece in proximity to the work surface; and
(d) processing the workpiece to produce an electronic device.
- (a) providing an electrostatic chuck comprising (i) a base body;
Specification