Film on Graphene on a Substrate and Method and Devices Therefor

• US 20120141799A1
• Filed: 12/02/2011
• Published: 06/07/2012
• Est. Priority Date: 12/03/2010
• Status: Abandoned Application

• Current Assignee: Francis Kub, Michael Mastro, Travis Anderson
• Original Assignee: Francis Kub, Michael Mastro, Travis Anderson
• Inventors: Kub, Francis, Anderson, Travis, Mastro, Michael
• Application Number:
  US13/310,347
• Publication Number:
  US 20120141799A1
• Time in Patent Office: Days
• US Class Current: 428/408
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 31/03923 including AIBIIICVI compound materials, e.g. CIS, CIGS
• CPC Class Codes: H01L 31/03925 including AIIBVI compound materials, e.g. CdTe, CdS
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A structure having a semiconductor material film formed graphene material layer that is disposed on a substrate is provided. The structure consists of a heterostructure comprising a semiconductor material film, a substrate, and a graphene material layer consisting of one or more sheets of graphene situated between the semiconductor material film and the substrate. The structure also can further include a graphene interface transition layer at the semiconductor material film interface with the graphene material layer and/or a substrate transition layer at the graphene material layer interface with the substrate.

Claims

1. A structure comprising:

a graphene material layer comprising at least one sheet of graphene;

a semiconductor material film adjacent to a first side of the graphene material layer in at least one area of said graphene material layer and forming an semiconductor material film/graphene material layer interface therewith; and

a substrate adjacent to a second side of graphene material layer opposite the first side and forming a substrate/graphene material layer interface therewith.

2. The structure of claim 1, where the semiconductor material film comprises at least one semiconductor material.

3. The structure of claim 1, where the semiconductor material film comprises at least one semiconductor material and at least one insulator material.

4. The structure of claim 1, where the semiconductor material film comprises at least one organic semiconductor.

5. The structure of claim 1, where the semiconductor material film is formed in at least dielectric opening on the graphene material layer

6. The structure of claim 1, where the graphene material layer comprises one graphene sheet

7. The structure of claim 1, where the graphene material layer comprises two or more graphene sheets.

8. The structure of claim 1, where the graphene material layer comprises at least one of fluorinated, etched, doped, intercalalated, oxidized, and intentionally damaged graphene sheet.

9. A device comprising:

a graphene material layer comprising at least one sheet of graphene;

a semiconductor material film adjacent to a first side of the graphene material layer in at least one area of said graphene material layer and forming an semiconductor material film/graphene material layer interface therewith; and

a substrate adjacent to a second side of graphene material layer opposite the first side and forming a substrate/graphene material layer interface therewith.

a plurality of electrodes, each of the plurality of electrodes being connected to and forming a separate electrical connection to at least one of the semiconductor material film, the graphene material layer, and the substrate.

10. The device of claim 9, where electrode connection are made to the semiconductor material film, the graphene material layer and the substrate.

11. The device of claim 9, where the graphene material layer provides a conductive path for a device.

12. The device of claim 9, the electrode connections are made to the semiconductor material film and the graphene material layer.

13. The device of claim 9, where electrode connections are made to the semiconductor material film and the substrate.

14. The device of claim 9, where the device is a light emitting diode.

15. The device of claim 9, where the device is a photovoltaic device.

16. A method of forming a structure comprising:

forming a graphene material layer on a substrate comprising at least one sheet of graphene and forming a substrate/graphene material layer interface therewith; and

forming a semiconductor material film on a first side of the graphene material layer in at least one area of said graphene material layer and forming an semiconductor material film/graphene material layer interface therewith.

17. The method of claim 16, where the semiconductor film is formed by epitaxial growth.

18. The method of claim 16, where the semiconductor material film is formed by bonding

19. The method of claim 16, where the semiconductor material film is formed by depositing.

20. The method of claim 16, where the semiconductor material film is one of semiconductor material, insulator material, organic semiconductor material, and polymer semiconductor material