Design Structure, Methods, and Apparatus Involving Photoconductor-on-Active Pixel Devices
First Claim
1. A method for fabricating a photoconductor-on-active pixel device, the method comprising:
- depositing a conductive layer on a first dielectric layer;
depositing a first capping layer on the conductive layer;
removing portions of the conductive layer and the first capping layer to define a first conductive pad portion and a first interconnect portion, and expose portions of the first dielectric layer;
depositing a second dielectric layer on the exposed portions of the first dielectric layer;
depositing a second capping layer on the first capping layer and the second dielectric layer;
removing portions of the second capping layer to expose portions of the second dielectric layer and removing portions of the second capping layer and first capping layer to expose a portion of the first conductive pad portion; and
forming radiation absorbing layers on the exposed portions of the second dielectric layer, the exposed portion of the first conductive pad portion, and the second capping layer.
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Accused Products
Abstract
A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.
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Citations
25 Claims
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1. A method for fabricating a photoconductor-on-active pixel device, the method comprising:
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depositing a conductive layer on a first dielectric layer; depositing a first capping layer on the conductive layer; removing portions of the conductive layer and the first capping layer to define a first conductive pad portion and a first interconnect portion, and expose portions of the first dielectric layer; depositing a second dielectric layer on the exposed portions of the first dielectric layer; depositing a second capping layer on the first capping layer and the second dielectric layer; removing portions of the second capping layer to expose portions of the second dielectric layer and removing portions of the second capping layer and first capping layer to expose a portion of the first conductive pad portion; and forming radiation absorbing layers on the exposed portions of the second dielectric layer, the exposed portion of the first conductive pad portion, and the second capping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A photoconductor-on-active pixel device comprising:
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a first dielectric layer disposed on an intermediary layer; a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion; a second capping layer disposed on the first capping layer and a portion of the second dielectric layer; an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A photoconductor-on-active pixel device comprising:
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a first dielectric layer disposed on an intermediary layer; a first capping layer disposed on first dielectric layer; a first conductive pad portion and a first interconnect portion disposed on the first capping layer; a second dielectric layer disposed on the first dielectric layer; an n-type doped silicon layer disposed on the second dielectric layer, the first conductive pad portion, and the first interconnect portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (19, 20)
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21. A design structure embodied in a machine readable medium used in a design process, the design structure comprising:
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a first dielectric layer disposed on an intermediary layer; a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion; a second capping layer disposed on the first capping layer and a portion of the second dielectric layer; an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (22, 23, 24, 25)
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Specification