ELECTROSTATIC DISCHARGE PROTECTION DEVICE

• US 20120146151A1
• Filed: 03/04/2011
• Published: 06/14/2012
• Est. Priority Date: 12/14/2010
• Status: Active Grant

• Current Assignee: National Chiao Tung University (Government of The Republic of China), Vanguard International Semiconductor Corporation
• Original Assignee: National Chiao Tung University (Government of The Republic of China), Vanguard International Semiconductor Corporation
• Inventors: Jou, Yeh-Ning, Ker, Ming-Dou, Chen, Wen-Yi, Hung, Chia-Wei, Chiou, Hwa-Chyi, HUANG, Yeh-Jen
• Granted Patent: US 8,507,946 B2
• Time in Patent Office: Days
• US Class Current: 257/355
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 27/0262 including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.

Claims

1. An electrostatic discharge (ESD) protection device, comprising:

a substrate comprising a first conductive type;

a first doped region formed in the substrate and comprising a second conductive type;

a second doped region formed in the substrate and comprising the second conductive type;

a third doped region formed in the substrate, comprising the first conductive type and located between the first and the second doped regions;

a gate formed on the substrate, located between the first and the second doped regions and comprising a first through hole; and

a plurality of contacts passing through the first through hole to contact with the third doped region.

2. The ESD protection device as claimed in claim 1, wherein the first through hole is a closed region.

3. The ESD protection device as claimed in claim 1, wherein the gate further comprises a second through hole, and the size of the second through hole is equal to the size of the first through hole.

4. The ESD protection device as claimed in claim 1, wherein the gate further comprises a second through hole, and the size of the second through hole is not equal to the size of the first through hole.

5. The ESD protection device as claimed in claim 4, further comprising:

a plurality of second contacts passing through the second through hole to contact with the third doped region.

6. The ESD protection device as claimed in claim 5, wherein the amount of the second contacts is higher than or less than the amount of the first contacts.

7. The ESD protection device as claimed in claim 5, wherein the arrangement of the second contacts is different from the arrangement of the first contacts.

8. The ESD protection device as claimed in claim 4, wherein the shape of the second through hole is different from the shape of the first through hole.

9. The ESD protection device as claimed in claim 1, wherein the first contacts is isolated from the gate.

10. The ESD protection device as claimed in claim 1, wherein the first conductive type is a P-type, and the second conductive type is a N-type.