SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS

• US 20120147207A1
• Filed: 11/18/2011
• Published: 06/14/2012
• Est. Priority Date: 11/24/2010
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Itonaga, Kazuichiroh
• Granted Patent: US 9,490,285 B2
• Time in Patent Office: Days
• US Class Current: 348/222.1
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A solid-state imaging device includes a supporting substrate that includes a concave portion, a solid-state imaging chip that is bonded on the supporting substrate so as to seal the concave portion in a view-angle region, a stress film that is formed on the surface of the solid-state imaging chip, and an imaging surface curved toward the concave portion at least in the view-angle region.

Claims

1. A solid-state imaging device comprising:

a supporting substrate that includes a concave portion;

a solid-state imaging chip that is bonded on the supporting substrate so as to seal the concave portion in a view-angle region;

a stress film that is formed on a surface of the solid-state imaging chip; and

an imaging surface curved toward the concave portion at least in the view-angle region.

2. The solid-state imaging device according to claim 1,

wherein the concave portion is in a vacuum state, and

the view-angle region of the solid-state imaging chip is curved by differential pressure between the vacuum and the atmospheric pressure and a stress of the stress film.

3. The solid-state imaging device according to claim 1,

wherein the solid-state imaging chip is adhered by an adhesive agent having volumetric shrinkage which is filled in the concave portion, and

the view-angle region of the solid-state imaging chip is curved by the volumetric shrinkage of the adhesive agent due to light irradiation or heating and a stress of the stress film.

4. The solid-state imaging device according to claim 1,

wherein the solid-state imaging chip is a backside-illumination type solid-state imaging chip,

the stress film is a film that is formed on a surface opposite to a light incident side of the solid-state imaging chip and has a compressive stress, and

the view-angle region of the solid-state imaging chip is curved by thinning the solid-state imaging chip.

5. The solid-state imaging device according to claim 1,

wherein the solid-state imaging chip is a frontside-illumination type solid-state imaging chip,

the stress film is a film that is formed on a surface of a light incident side of the solid-state imaging chip and has a tensile stress, and

the view-angle region of the thinned solid-state imaging chip is curved.

9. The solid-state imaging device according to claim 1,

wherein the center of the view-angle region is matched to an optical center of an imaging lens system.

19. An electronic apparatus comprising:

a solid-state imaging device;

an optical system that introduces incident light into a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit that processes an output signal of the solid-state imaging device,

wherein the solid-state imaging device includes the solid-state imaging device according to claim 1.

6. A solid-state imaging device comprising:

a supporting substrate that includes a concave portion;

an adhesive agent that is filled in the concave portion and has volumetric shrinkage;

a solid-state imaging chip that is bonded on the supporting substrate so as to seal the concave portion in a view-angle region and is adhered by the adhesive agent; and

an imaging surface in which the view-angle region is curved to the concave portion side by the volumetric shrinkage of the adhesive agent due to light irradiation or heating.

7. A solid-state imaging device comprising:

a supporting substrate that includes a concave portion;

a solid-state imaging chip that is bonded onto the supporting substrate so as to seal the concave portion in a view-angle region; and

an imaging surface in which the view-angle region is curved to the concave portion side by differential pressure between a vacuum in the concave portion and the atmospheric pressure of the outside of the solid-state imaging chip.

8. A solid-state imaging device comprising:

a solid-state imaging chip that includes a solid-state imaging portion;

a supporting substrate adhered to the solid-state imaging chip and having a concave portion that is formed so that a portion corresponding to a view-angle region of the solid-state imaging portion is removed over the entire region in the thickness direction of the corresponding portion;

an adhesive agent that is filled in the concave portion and has volumetric shrinkage;

a sealing substrate that seals the adhesive agent in the rear surface of the supporting substrate; and

an imaging surface in which the view-angle region is curved to the concave portion side by the volumetric shrinkage of the adhesive agent due to light irradiation or heating.

10. A manufacturing method of a solid-state imaging device comprising:

forming a plurality of concave portions in a supporting substrate;

forming a stress film on a surface of a semiconductor wafer which includes a plurality of solid-state imaging portions;

bonding the semiconductor wafer on the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions;

curving the view-angle regions of the plurality of solid-state imaging portions to the concave portions side by stress of the stress film in a state where the semiconductor wafer is thinned; and

dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions.

11. The manufacturing method of a solid-state imaging device according to claim 10,

wherein the bonding of the semiconductor wafer is performed in a vacuum chamber, and

thereafter, a pressure in the chamber is made to be in atmospheric pressure, and

the curving of the view-angle regions is performed by both effects of differential pressure between a vacuum and the atmospheric pressure and the stress of the stress film.

12. The manufacturing method of a solid-state imaging device according to claim 10, further comprising:

filling an adhesive agent having shrinkage characteristics into the concave portions of the supporting substrate,

wherein the bonding of the semiconductor wafer on the supporting substrate is performed by bonding between the supporting substrate and the semiconductor wafer and bonding between the adhesive agent and the semiconductor wafer, and

the curving of the view-angle regions is performed by both volumetric shrinkage of the adhesive agent due to a light irradiation or heating and the stress of the stress film.

13. The manufacturing method of a solid-state imaging device according to claim 10, further comprising:

forming the plurality of solid-state imaging portions of the semiconductor wafer in a backside-illumination type,

wherein the stress film is formed as a film having a compressive stress on a surface opposite to the light incident side of the solid state imaging portions, and

the curving of the view-angle regions is performed by the compressive stress of the stress film due to the thinning of the semiconductor wafer.

14. The manufacturing method of a solid-state imaging device according to claim 10, further comprising:

forming the plurality of solid-state imaging portions of the semiconductor wafer in a frontside-illumination type,

wherein the stress film is formed as a film having a tensile stress on a surface of a light incident side of the solid-state imaging portions, and

the curving of the view-angle regions is performed by the tensile stress of the stress film.

18. The manufacturing method of a solid-state imaging device according to claim 10,

wherein the bonding of the semiconductor wafer is performed so that the center of the view-angle region is matched to an optical center of the imaging lens system.

15. A manufacturing method of a solid-state imaging device comprising:

forming a plurality of concave portions on a supporting substrate;

filling an adhesive agent having volumetric shrinkage into the concave portion;

bonding a semiconductor wafer including a plurality of solid-state imaging portions on the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions, and adhering by the adhesive agent;

curving the view-angle regions of the plurality of solid-state imaging portions to the concave portions side by a volumetric shrinkage effect of the adhesive agent due to light irradiation or heating in a state where the semiconductor wafer is thinned; and

dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions.

16. A manufacturing method of a solid-state imaging device comprising:

forming a plurality of concave portions on a supporting substrate;

bonding a semiconductor wafer including a plurality of solid-state imaging portions onto the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions in a vacuum chamber;

thereafter, bringing the chamber to atmospheric pressure;

curving the view-angle regions of the plurality of solid-state imaging portions to the concave portions side by differential pressure between a vacuum and the atmospheric pressure in a state where the semiconductor wafer is thinned; and

dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions.

17. A manufacturing method of a solid-state imaging device comprising:

bonding a semiconductor wafer including a plurality of solid-state imaging portions onto a supporting substrate and thinning the semiconductor wafer, and thereafter, removing a portion corresponding to a view-angle region of the solid-state imaging portion of the supporting substrate over the entire region in the thickness direction of the corresponding portion, and forming a concave portion;

filling an adhesive agent having volumetric shrinkage into the concave portion;

bonding a sealing substrate sealing the concave portion to the rear surface of the supporting substrate, and sealing the adhesive agent;

curving the view-angle region by a volumetric shrinkage effect of the adhesive agent due to light irradiation or heating; and

dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions.