GAS INJECTION APPARATUS AND SUBSTRATE PROCESSING APPARATUS USING SAME

• US 20120152171A1
• Filed: 08/24/2010
• Published: 06/21/2012
• Est. Priority Date: 08/31/2009
• Status: Active Grant

• Current Assignee: Wonik IPS Co., Ltd.
• Original Assignee: Wonik IPS Co., Ltd.
• Inventors: Lee, Jung-Hwan, Park, Woo-Young, Hahm, Tae-Ho
• Granted Patent: US 9,732,424 B2
• Time in Patent Office: Days
• US Class Current: 118/730
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

Claims

1. A gas injection device comprising:

a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates,

wherein each of the plurality of gas injection units comprises;

a top plate in which an inlet configured to introduce the process gas is provided; and

an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate,

wherein, in at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

2. The gas injection device of claim 1, wherein an intermediate plate is disposed between the top plate and the injection plate,

the gas diffusion space comprises a first gas diffusion space defined between the top plate and the intermediate plate and connected to the inlet and a second gas diffusion space defined between the intermediate plate and the injection plate and connected to the gas injection holes, and

the intermediate plate comprises a plurality of connection holes defined under the first gas diffusion space and connected to the second gas diffusion space.

3. The gas injection device of claim 1, wherein the inlet configured to introduce the process gas is biasedly disposed toward a central side of the substrate support part.

4. The gas injection device of claim 1, wherein the inlet is provided in plurality along the radius direction of the substrate support part.

5. The gas injection device of claim 4, wherein an amount of process gas introduced through the inlets disposed adjacent to a central side of the substrate support part is relatively less than an amount of process gas introduced through the inlets disposed at the peripheral side of the substrate support part along the radius direction of the substrate support part.

6. The gas injection device of claim 1, wherein the gas injection holes comprise a plurality of first injection holes defined along the radius direction of the substrate support part and a plurality of second injection holes defined along the circumference direction of the substrate support part, and the gas diffusion space is defined along the arrangement directions of the first injection holes and the second injection holes.

7. The gas injection device of claim 1, wherein the top plate has one structure selected from a structure in which the top plate is integrally provided, the injection plate of each of the gas injection units is disposed along the circumference direction with respect to a center of the substrate support part to occupy a portion of the top plate, and each of the gas injection units is coupled to a lower portion of the top plate, and a structure in which the top plate is separately provided in plurality for each gas injection unit, the plurality of top plates are disposed along the circumference direction with respect to the center of the substrate support part and respectively fixed to a frame coupled to an upper portion of the chamber.

8. The gas injection device of claim 2, wherein the larger number of connection holes defined in the intermediate plate are defined at the peripheral side of the substrate support part than at the central side of the substrate support part along the radius direction of the substrate support part.

9. The gas injection device of claim 2, wherein each of the connection holes defined at the peripheral side of the substrate support part along the radius direction of the substrate support part among the plurality of connection holes defined in the intermediate plate has a diameter greater than a diameter of each of the connection holes defined at the central side of the substrate support part.

10. The gas injection device of claim 1, wherein the gas injection units comprise a plurality of source gas injection units configured to inject a source gas and a plurality of purge gas injection units configured to inject a purge gas.

11. The gas injection device of claim 10, further comprising a central purge gas injection unit disposed at a central portion of the plurality of gas injection units disposed along the circumference direction of the substrate support part so that the purge gas for purging the source gases is supplied toward the central side of the substrate support part.

12. The gas injection device of claim 10, wherein two or more injection units disposed adjacent to each other to inject the same gas among the source gas injection units and the purge gas injection units are grouped to form a gas injection block.

13. The gas injection device of claim 12, wherein the source gas injection units comprise injection units configured to inject the source gas and injection units configured to inject a reaction gas reacting with the source gas, and the plurality of injection units configured to inject the source gas or the plurality of injection units configured to inject the reaction gas are grouped to form a gas injection block.

14. The gas injection device of claim 10, wherein a buffer injection unit through which a gas is selectively injected or not injected is disposed between the plurality of gas injection units.

15. A substrate processing apparatus comprising:

a chamber having an inner space in which predetermined processes with respect to substrates are performed;

a substrate support part on which the plurality of substrates are seated, the substrate support part being rotatably disposed within the chamber; and

a gas injection device disposed above the substrate support part to inject a gas onto the substrates, the gas injection device according to any one of claims 1 to 14.