Alkali Metal Deposition System

• US 20120152727A1
• Filed: 11/21/2011
• Published: 06/21/2012
• Est. Priority Date: 11/24/2010
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kwak, Byung Sung, Bangert, Stefan, Koenig, Michael, Ries, Florian, Hofmann, Ralf
• Application Number:
  US13/301,718
• Publication Number:
  US 20120152727A1
• Time in Patent Office: Days
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3426 Material

Abstract

A deposition system for alkali and alkaline earth metals may include a metal sputter target including cooling channels, a substrate holder configured to hold a substrate facing and parallel to the metal sputter target, and multiple power sources configured to apply energy to a plasma ignited between the substrate and the metal sputter target. The target may have a cover configured to fit over the target material, the cover may include a handle for automated removal and replacement of the cover within the deposition system, and a valve for providing access to the volume between the target material and the cover for pumping, purging or pressurizing the gas within the volume. Sputter gas may include noble gas with an atomic weight less than that of the metal target.

Claims

1. A deposition system for alkali and alkaline earth metals comprising:

a vacuum chamber;

a metal sputter target within said vacuum chamber, said target comprising target material attached to a backing plate including cooling channels;

a substrate holder within said vacuum chamber, said holder being configured to hold a substrate facing and parallel to said metal sputter target; and

multiple power sources configured to apply energy to a plasma ignited between said substrate and said target material, said multiple power sources including a first power source for controlling target material self bias, and a second power source for controlling ion density in said plasma;

wherein said target material is an alkali metal or alkaline earth metal.

2. The deposition system of claim 1, wherein said cooling channels are round, rectangular or pyramidal in cross-section.

3. The deposition system of claim 1, further comprising a pump and cooling unit configured to circulate a coolant through said cooling channels.

4. The deposition system of claim 3, wherein said coolant is provided to said cooling channels at a temperature of less than zero degrees Celsius.

5. The deposition system of claim 1, further comprising a cover configured to fit over said target material, said cover and said metal sputter target being configured to form a seal there between.

6. The deposition system of claim 5, wherein said cover includes a handle for removal and replacement of said cover within said deposition system, said deposition system being configured to accommodate automated removal of said cover and storage of said cover in a non-sputtering zone adjacent to said metal sputter target.

7. The deposition system of claim 5, wherein said cover includes a valve for providing access to the sealed volume between said target material and said cover for pumping, purging or pressurizing the gas in said sealed volume.

8. The deposition system of claim 1, wherein said multiple power sources include a first radio frequency power source coupled to said target and a second radio frequency power source coupled to said target, said first and second radio frequency power sources being configured to provide different frequencies to said metal sputter target.

9. The deposition system of claim 8, wherein said first radio frequency power source controls target material self bias, and said second radio frequency power source controls ion density in said plasma.

10. The deposition system of claim 1, wherein said multiple power sources include a radio frequency power source coupled to said target and a direct current power source coupled to said target.

11. The deposition system of claim 1, wherein said multiple power sources include a radio frequency power source coupled to said target and a pulsed direct current power source coupled to said target.

12. The deposition system of claim 1, wherein said deposition system is configured for integration into a cluster tool.

13. The deposition system of claim 12, wherein the surface area of said target material is larger than the substrate area.

14. The deposition system of claim 1, wherein said deposition system is configured for integration into an in-line tool.

15. The deposition system of claim 14, wherein the width of said target material is greater than the substrate width.

16. The deposition system of claim 1, further comprising a process gas supply coupled to said vacuum chamber, said process gas supply including a supply of noble gas, said noble gas being chosen with an atomic weight less than the atomic weight of said target material.

17. The deposition system of claim 1, further comprising a process gas supply coupled to said vacuum chamber, said process gas supply including a supply of noble gases, said noble gases including a first noble gas with an atomic weight less than the atomic weight of said target material and a second noble gas with an atomic weight greater than the atomic weight of said target material.

18. The deposition system of claim 17, wherein said first noble gas is Helium, said second noble gas is Argon and said target material is Lithium.

19. A method of sputter depositing alkali and alkaline earth metals on a substrate comprising:

igniting a plasma between said substrate and a sputter target within a vacuum chamber, wherein said plasma includes noble gas species and said sputter target comprises target material attached to a backing plate including cooling channels;

adding energy to said plasma by multiple power sources, wherein said multiple power sources include a first power source for controlling target material self bias, and a second power source for controlling ion density in said plasma;

sputtering target material from said sputter target and depositing the sputtered target material on said substrate, wherein said sputtering is by noble gas species from said plasma and wherein said noble gas species include ions with an atomic weight less than the atomic weight of said target material; and

during said sputtering, cooling said sputter target by pumping coolant through said cooling channels in said backing plate;

wherein said target material is an alkali metal or alkaline earth metal.

20. The method of claim 19, further comprising:

providing said sputter target with a cover over said target material, said cover being sealed to said sputter target for protection of said target material from ambient gases;

installing said sputter target with said cover in said vacuum chamber; and

removing said cover from said sputter target in said vacuum chamber.

21. The method of claim 20, further comprising pumping down said vacuum chamber after said installing, and wherein said removing is automated under vacuum in said vacuum chamber.