OPTICAL SEMICONDUCTOR DEVICE

• US 20120153345A1
• Filed: 12/14/2011
• Published: 06/21/2012
• Est. Priority Date: 12/15/2010
• Status: Active Grant

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: Kondo, Takashi, Akazawa, Koji, Ozaki, Takashi
• Granted Patent: US 8,492,791 B2
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

The present invention relates to an optical semiconductor device including: a substrate having mounted thereon an LED chip; an encapsulation resin layer embedding the LED chip; an inorganic high-heat conductive layer; and a wavelength conversion layer containing an inorganic phosphor powder, in which the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly.

Claims

1. An optical semiconductor device comprising:

a substrate having mounted thereon an LED chip;

an encapsulation resin layer embedding the LED chip;

an inorganic high-heat conductive layer; and

a wavelength conversion layer containing an inorganic phosphor powder,

wherein the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly.

2. The optical semiconductor device according to claim 1, wherein the inorganic high-heat conductive layer comprises yttrium aluminate (YAG).

3. The optical semiconductor device according to claim 1, wherein the inorganic high-heat conductive layer comprises a glass.

4. The optical semiconductor device according to claim 1, wherein the encapsulation resin layer contains silica fine particles.

5. The optical semiconductor device according to claim 1, wherein the inorganic high-heat conductive layer has a heat conductivity of 1.0 W/mK or more.

6. The optical semiconductor device according to claim 1, wherein the encapsulation resin layer comprises a silicone resin.

7. The optical semiconductor device according to claim 1, wherein the wavelength conversion layer comprises a silicone resin.

8. The optical semiconductor device according to claim 1, wherein the inorganic high-heat conductive layer has a thickness of 10 to 1000 μ

m.

9. A method for manufacturing an optical semiconductor device, said method comprising:

forming a wavelength conversion layer and an inorganic high-heat conductive layer in this order in a concave mold;

filling an encapsulation resin on the inorganic high-heat conductive layer;

disposing a substrate having mounted thereon an LED chip on the encapsulation resin so as to embed the LED chip in the encapsulation resin; and

encapsulating the LED chip.