SEMICONDUCTOR DEVICE

• US 20120153382A1
• Filed: 08/08/2011
• Published: 06/21/2012
• Est. Priority Date: 12/17/2010
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: NARAZAKI, Atsushi, YOSHIDA, Hisaaki, HIGASHI, Kazuaki
• Granted Patent: US 8,530,966 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor device includes a trench extending from a surface of a P-base layer to a surface of a P-well layer. The trench has a trench end portion defined in the surface of the P-well layer and in a direction in which the trench extends. The trench has first and second regions. The first region extends from the trench end portion to get into the surface of the P-base layer near a boundary between the P-base layer and the P-well layer. The second region extends in the surface of the P-base layer from an end portion of the first region. A trench width is greater in the first region than in the second region.

Claims

1. A semiconductor device, comprising:

a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type;

a base layer of a second conductivity type formed selectively in a surface of said drift layer;

a well layer of the second conductivity type formed in the surface of said drift layer, the well layer being adjacent to said base layer;

a trench extending from a surface of said base layer to a surface of said well layer, the trench having a trench end portion defined in the surface of said well layer and in a direction in which the trench extends; and

a gate electrode formed selectively on said drift layer in which said trench is formed, wherein

said trench has first and second regions, the first region extending from said trench end portion to get into the surface of said base layer near a boundary between said base layer and said well layer, the second region extending in the surface of said base layer from an end portion of said first region, and

a trench width is greater in said first region than in said second region.

2. The semiconductor device according to claim 1, wherein the trench width is 0.25 μ

m or smaller in said second region.

3. The semiconductor device according to claim 1, wherein the trench width is 0.35 μ

m or more in said first region.

4. The semiconductor device according to claim 1, wherein said semiconductor substrate is made of a wide band gap semiconductor.