HIGH FREQUENCY SEMICONDUCTOR SWITCH
First Claim
1. A high frequency semiconductor switch having a plurality of field effect transistors able to implement wireless communications by switching an application of voltage to a gate of each field effect transistor, the high frequency semiconductor switch characterized in that,the plurality of field effect transistors each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate so as to be disposed at the predetermined distance, a source contact formed on the substrate so as to be connected with the source region, and a drain contact formed on the substrate so as to be connected with the drain region, andamong the plurality of field effect transistors, a distance between a source contact and a drain contact of a reception terminal side transistor connected with a reception terminal side is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor connected with a transmission terminal side.
1 Assignment
0 Petitions
Accused Products
Abstract
There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.
64 Citations
1 Claim
-
1. A high frequency semiconductor switch having a plurality of field effect transistors able to implement wireless communications by switching an application of voltage to a gate of each field effect transistor, the high frequency semiconductor switch characterized in that,
the plurality of field effect transistors each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate so as to be disposed at the predetermined distance, a source contact formed on the substrate so as to be connected with the source region, and a drain contact formed on the substrate so as to be connected with the drain region, and among the plurality of field effect transistors, a distance between a source contact and a drain contact of a reception terminal side transistor connected with a reception terminal side is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor connected with a transmission terminal side.
Specification
-
- Resources
-
Current AssigneeSamsung Electro-Mechanics Co., Ltd. (Samsung Group)
-
Original AssigneeSamsung Electro-Mechanics Co., Ltd. (Samsung Group)
-
InventorsSugiura, Tsuyoshi
-
Granted Patent
-
Time in Patent OfficeDays
-
Field of Search
-
US Class Current327/427
-
CPC Class CodesH03K 17/693 Switching arrangements with...
