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METHOD FOR FABRICATING FINE PATTERN

  • US 20120156850A1
  • Filed: 09/23/2011
  • Published: 06/21/2012
  • Est. Priority Date: 12/21/2010
  • Status: Active Grant
First Claim
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1. A method for fabricating a fine pattern, comprising:

  • forming a first photomask including first light transmission regions set in a line shape over a first phase shift mask (PSM) region and a first binary mask (BM) region adjacent to the first phase shift mask region;

    forming a second photomask including second light transmission regions set in a line shape over a second phase shift mask region and a second binary mask region adjacent to the second phase shift mask region, wherein the second light transmission regions intersect the first light transmission regions;

    exposing a resist layer using the first photomask;

    exposing the resist layer using the second photomask; and

    developing the resist layer exposed to the first and second photomasks to form resist patterns with open regions corresponding to portions where the first light transmission regions intersect the second light transmission regions.

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