SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a substrate;
an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions over the substrate;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the first oxide semiconductor region with the gate insulating film therebetween,wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions,wherein each of the pair of second oxide semiconductor regions is an amorphous region, andwherein the first oxide semiconductor region comprises a crystalline region comprising c-axis alignment.
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Abstract
A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. One or more kinds of elements selected from Group 15 elements such as nitrogen, phosphorus, and arsenic are added to the second oxide semiconductor regions.
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Citations
28 Claims
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1. A semiconductor device comprising:
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a substrate; an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions over the substrate; a gate insulating film over the oxide semiconductor film; and a gate electrode over the first oxide semiconductor region with the gate insulating film therebetween, wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions, wherein each of the pair of second oxide semiconductor regions is an amorphous region, and wherein the first oxide semiconductor region comprises a crystalline region comprising c-axis alignment. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; and an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions over the gate insulating film; wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions, wherein each of the pair of second oxide semiconductor regions is an amorphous region, and wherein the first oxide semiconductor region comprises a crystalline region comprising c-axis alignment. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating surface; performing heat treatment so that the oxide semiconductor film comprises a crystalline region comprising c-axis alignment; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode over the gate insulating film; and forming a first oxide semiconductor region and a pair of second oxide semiconductor regions, wherein the pair of second oxide semiconductor regions are formed by adding an ion to the oxide semiconductor film with the gate electrode as a mask, wherein each of the pair of second oxide semiconductor regions is an amorphous region. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; performing heat treatment so that the oxide semiconductor film comprises a crystalline region comprising c-axis alignment; forming a first insulating film over the oxide semiconductor film; patterning the first insulating film to form a second insulating film overlapping with the gate electrode; and forming a first oxide semiconductor region and a pair of second oxide semiconductor regions, wherein the pair of second oxide semiconductor regions are formed by adding an ion to the oxide semiconductor film with the second insulating film as a mask, wherein each of the pair of second oxide semiconductor regions is an amorphous region, and wherein an end portion of the second insulating film is provided on an inner side than an end portion of the gate electrode. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification