SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20120161132A1
• Filed: 12/23/2011
• Published: 06/28/2012
• Est. Priority Date: 12/28/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 9,287,294 B2
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 35/58 based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides containing free binder metal C22C29/00
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: Y02D 10/00 Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

An object is to provide a novel semiconductor device which can store data even when power is not supplied in a data storing time and which does not have a limitation on the number of writing operations. The semiconductor device includes a transistor and a capacitor. The transistor includes a first oxide semiconductor layer, a source electrode and a drain electrode which are in contact with the first oxide semiconductor layer, a gate electrode overlapping with the first oxide semiconductor layer, and a gate insulating layer between the first oxide semiconductor layer and the gate electrode. The capacitor includes the source electrode or the drain electrode, a second oxide semiconductor layer in contact with the source electrode or the drain electrode, and a capacitor electrode in contact with the second oxide semiconductor layer.

Claims

1. A capacitor comprising:

a first electrode;

a second electrode; and

an oxide semiconductor layer interposed and in contact with the first electrode and the second electrode.

9. The capacitor according to claim 1,

wherein at least one of the first electrode and the second electrode comprises a metal oxide layer in contact with the oxide semiconductor layer.

13. The capacitor according claim 1,

wherein the first electrode comprises an In—

Ga—

Zn—

O—

N-based compound conductor.

16. The capacitor according claim 1,

wherein the oxide semiconductor layer comprises an oxide semiconductor or an oxynitride semiconductor, the oxide semiconductor or the oxynitride semiconductor being a non-single-crystal and comprising a triangular or hexagonal atomic arrangement when seen from a direction parallel to a vector normal to an a-b plane and a phase where metal atoms are arranged in a layered manner or the metal atoms and oxygen atoms are arranged in a layered manner in a c-axis direction.

19. The capacitor according to claim 1,

wherein the oxide semiconductor layer comprises one or more elements chosen among silicon, germanium, cerium, titanium, tungsten, aluminum, copper, yttrium, lanthanum, vanadium.

22. An electronic device including the capacitor according to claim 1.

2. A semiconductor device comprising:

a transistor comprising;

a gate electrode;

a first oxide semiconductor layer overlapping with the gate electrode;

a gate insulating layer interposed between the first oxide semiconductor layer and the gate electrode; and

a source electrode and a drain electrode, each in electrical contact with the first oxide semiconductor layer; and

a capacitor comprising;

a first electrode;

a second electrode electrically connected to one of the source electrode and the drain electrode of the transistor; and

a second oxide semiconductor layer interposed between and in contact with the first electrode and the second electrode.

3. A semiconductor device according to claim 2,

wherein the gate insulating layer is over the gate electrode;

and

wherein the first oxide semiconductor layer is over the gate insulating layer and the gate electrode.

4. The semiconductor device according to claim 3, further comprising:

an insulating layer over the first oxide semiconductor layer, the source electrode and the drain electrode; and

another gate electrode over the insulating layer and overlapping the first oxide semiconductor layer.

6. The semiconductor device according to claim 2,

wherein at least part of the second electrode is formed using a same conductive layer as the source electrode or the drain electrode.

7. The semiconductor device according to claim 2,

wherein the second electrode comprises an extension of one of the source electrode and the drain electrode.

8. The semiconductor device according to claim 2,

wherein the first electrode comprises a same first layer as one of the gate electrode and the source electrode, and

wherein the second electrode comprises a same second layer as the other one of the gate electrode and the source electrode.

10. The semiconductor device according to claim 2,

wherein at least one of the first electrode and the second electrode comprises a metal oxide layer in contact with the second oxide semiconductor layer.

12. The semiconductor device according to claim 2,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed during a same process step.

14. The semiconductor device according claim 2,

wherein at least one of the first electrode and the gate electrode comprises an In—

Ga—

Zn—

O—

N-based compound conductor.

17. The semiconductor device according claim 2,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise an oxide semiconductor or an oxynitride semiconductor, the oxide semiconductor or the oxynitride semiconductor being a non-single-crystal and comprising a triangular or hexagonal atomic arrangement when seen from a direction parallel to a vector normal to an a-b plane and a phase where metal atoms are arranged in a layered manner or the metal atoms and oxygen atoms are arranged in a layered manner in a c-axis direction.

20. The semiconductor device according to claim 2,

wherein the second oxide semiconductor layer comprises one or more elements chosen among silicon, germanium, cerium, titanium, tungsten, aluminum, copper, yttrium, lanthanum, vanadium.

23. An electronic device including the semiconductor device according to claim 2.

5. A semiconductor device comprising:

a transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

a first oxide semiconductor layer over the gate insulating layer and the gate electrode; and

a source electrode and a drain electrode, each in electrical contact with the first oxide semiconductor layer; and

a capacitor comprising;

a first electrode made from a same layer as the gate electrode;

a second electrode comprising an extension from one of the source electrode and the drain electrode; and

a second oxide semiconductor layer interposed between and in contact with the first electrode and the second electrode, the second oxide semiconductor layer being formed during a same process step as the first oxide semiconductor layer.

11. The semiconductor device according to claim 5,

wherein at least one of the first electrode and the second electrode comprises a metal oxide layer in contact with the second oxide semiconductor layer.

15. The semiconductor device according claim 5,

wherein the first electrode and the gate electrode comprise an In—

Ga—

Zn—

O—

N-based compound conductor.

18. The semiconductor device according claim 5,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise an oxide semiconductor or an oxynitride semiconductor, the oxide semiconductor or the oxynitride semiconductor being a non-single-crystal and comprising a triangular or hexagonal atomic arrangement when seen from a direction parallel to a vector normal to an a-b plane and a phase where metal atoms are arranged in a layered manner or the metal atoms and oxygen atoms are arranged in a layered manner in a c-axis direction.

21. The semiconductor device according to claim 5,

wherein the second oxide semiconductor layer comprises one or more elements chosen among silicon, germanium, cerium, titanium, tungsten, aluminum, copper, yttrium, lanthanum, vanadium.

24. An electronic device including the semiconductor device according to claim 5.