SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, DRIVING CIRCUIT UTILIZING A SEMICONDUCTOR TRANSISTOR MANUFACTURED ACCORDING TO THE SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, PIXEL CIRCUIT INCLUDING THE DRIVING CIRCUIT AND A DISPLAY ELEMENT, DISPLAY PANEL HAVING THE PIXEL CIRCUITS DISPOSED IN A MATRIX, DISPLAY APPARATUS PROVIDED WITH THE DISPLAY PANEL

• US 20120161138A1
• Filed: 11/08/2011
• Published: 06/28/2012
• Est. Priority Date: 12/24/2010
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: MIYAMOTO, Akihito, OKUMOTO, Yuko
• Granted Patent: US 8,871,579 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/82 Electrodes

Abstract

Provided is a manufacturing method for a semiconductor transistor comprising: forming a resist layer containing resist material on a base layer including a substrate; patterning the resist layer to form apertures therein; forming a metal layer by disposing metallic material to cover the resist layer and to fill the apertures formed in the resist layer; removing a metal oxide layer formed by oxidation of a top surface of the metal layer by performing cleaning by using a cleaning liquid; forming the source electrode and the drain electrode by removing the resist layer by using a dissolution liquid different from the cleaning liquid, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and forming a semiconductor layer so as to cover the source electrode and the drain electrode.

Claims

1. A manufacturing method for a semiconductor transistor that includes:

a gate electrode;

a gate insulating layer;

a source electrode;

a drain electrode; and

a semiconductor layer, the manufacturing method comprising;

a first step of forming a resist layer containing resist material on a base layer that includes a substrate;

a second step of patterning areas of the resist layer and thereby forming a plurality of apertures;

a third step of forming a metal layer containing metallic material so as to cover the resist layer and to fill the apertures formed in the resist layer, the metallic material being for forming a source electrode and a drain electrode;

a fourth step of removing a metal oxide layer by performing cleaning with use of a liquid for cleaning, the metal oxide layer being formed by oxidation of a top surface of the metal layer;

a fifth step, subsequent to the fourth step, of forming the source electrode and the drain electrode by removing the resist layer by use of a liquid for dissolution different from the liquid for cleaning, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and

a sixth step of forming a semiconductor layer so as to cover the source electrode and the drain electrode.

2. The manufacturing method of claim 1, wherein

in the fourth step, the removal of the metal oxide layer by using the liquid for cleaning is performed without removing the resist layer.

3. The manufacturing method of claim 1, wherein

an alkaline solution is used as the liquid for cleaning in the fourth step, and

an organic stripper solution is used as the liquid for dissolution in the fifth step.

4. The manufacturing method of claim 1, wherein

the metallic material for forming the metal layer in the third step is one of tungsten, molybdenum, and a molybdenum-tungsten alloy.

5. The manufacturing method of claim 1, wherein

the base layer further includes, in addition to the substrate:

a gate electrode formed on the substrate; and

a gate insulating layer formed so as to cover the gate electrode.

6. A driving circuit incorporating a semiconductor transistor manufactured according to the manufacturing method of claim 1.

7. A pixel circuit comprising:

a display element; and

a driving circuit that supplies driving current to the display element, wherein

the driving circuit incorporates a semiconductor transistor manufactured according to the manufacturing method of claim 1.

8. A display panel comprising:

a plurality of pixel circuits disposed in a matrix state,

each of the pixel circuits including;

a display element; and

a driving circuit that supplies driving current to the display element, wherein

the driving circuit incorporates a semiconductor transistor manufactured according to the manufacturing method of claim 1.

9. A display apparatus comprising the display panel of claim 8.