White Organic Light Emitting Diode Display Device and Method of Fabricating the Same

• US 20120161141A1
• Filed: 12/22/2011
• Published: 06/28/2012
• Est. Priority Date: 12/24/2010
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Pang, Hee-Suk, JEON, Eun-Ju
• Granted Patent: US 8,916,876 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 2102/361 Temperature
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

According to the present invention, there is provided a white organic light emitting diode (W-OLED) display device for effectively blocking outgas generated from a color filter using silicon nitride having a low water vapor transmission rate as a passivation layer instead of a planarization layer which is an organic insulating layer, and a method of fabricating the same.

Claims

1. A method of fabricating a white organic light emitting diode (W-OLED) display device, the method comprising:

forming a switching thin-film transistor and a driving thin-film transistor on a substrate;

forming a red, green and blue color filter on a pixel region in which an image is displayed;

forming a passivation layer using silicon nitride on the substrate formed with the color filter;

forming a pixel electrode connected to a drain electrode of the driving thin-film transistor on the passivation layer;

forming a partition for partitioning the pixel region on the substrate formed with the pixel electrode;

forming a white organic light emission layer on the substrate formed with the partition; and

forming a common electrode on the organic light emission layer.

2. The method of claim 1, further comprising:

performing a first curing process to remove outgas within the color filter subsequent to forming the color filter on a pixel region in which an image is displayed.

3. The method of claim 1, wherein the passivation layer is formed with a thickness of 1000-5000 Å

using silicon nitride.

4. The method of claim 2, further comprising:

forming a plurality of holes for exposing the color filter by selectively removing the passivation layer at an upper portion of the color filter.

5. The method of claim 4, wherein the holes are formed within the pixel region or formed out of the pixel region such as an upper portion of a data line or gate line.

6. The method of claim 4, further comprising:

performing a second curing process for removing outgas that has still remained in the first curing process subsequent to forming a plurality of holes for exposing the color filter.

7. The method of claim 6, wherein the first and the second curing process are carried out for one hour at temperature of 230°

C.

8. A white organic light emitting diode (W-OLED) display device, comprising:

a switching thin-film transistor and a driving thin-film transistor formed on a substrate;

a red, green and blue color filter formed on a substrate surface of a pixel region in which an image is displayed;

a passivation layer formed on the substrate formed with the switching thin-film transistor, driving thin-film transistor, and color filter, and formed by using silicon nitride;

a pixel electrode formed on the passivation layer, and connected to a drain electrode of the driving thin-film transistor;

a partition formed on the substrate formed with the pixel electrode to partition the pixel region;

a white organic light emission layer formed on the substrate formed with the partition; and

a common electrode formed on the organic light emission layer.

9. The W-OLED display device of claim 8, wherein the passivation layer is formed with a plurality of holes for exposing the color filter.

10. The W-OLED display device of claim 9, wherein outgas generated from the color filter is drawn out through the holes.

11. The W-OLED display device of claim 9, wherein the holes are formed within the pixel region or formed out of the pixel region such as an upper portion of a data line or gate line.

12. The W-OLED display device of claim 8, wherein the passivation layer is formed by using silicon nitride to block outgas generated from the color filter, and formed with a thickness of 1000-5000 Å

to prevent the passivation layer from being served as a wave guide.