CHEMICAL SENSING AND/OR MEASURING DEVICES AND METHODS
First Claim
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1. A device comprising:
- a semiconductor substrate with a planar surface;
a semiconductor nanopillar on the semiconductor substrate and substantially perpendicular to the planar surface;
an insulating layer covering the semiconductor nanopillar;
a conductive layer covering the insulating layer, wherein the conductive layer and the insulating layer are devoid of an end portion thereof, thus exposing an uninsulated pillar end of the semiconductor nanopillar; and
a functional layer covering the conductive layer.
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Abstract
Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.
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Citations
31 Claims
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1. A device comprising:
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a semiconductor substrate with a planar surface; a semiconductor nanopillar on the semiconductor substrate and substantially perpendicular to the planar surface; an insulating layer covering the semiconductor nanopillar; a conductive layer covering the insulating layer, wherein the conductive layer and the insulating layer are devoid of an end portion thereof, thus exposing an uninsulated pillar end of the semiconductor nanopillar; and a functional layer covering the conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 26, 27, 28, 29, 30, 31)
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13. A device comprising:
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a semiconductor substrate with a planar surface; a semiconductor nanopillar on the semiconductor substrate and substantially perpendicular to the planar surface; an insulating layer covering the semiconductor nanopillar wherein the insulating layer is devoid of an end portion thereof, thus exposing an uninsulated pillar end of the semiconductor nanopillar; and a functional layer covering the insulating layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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14. A method for fabricating a device, the method comprising:
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providing a semiconductor substrate with a planar surface; forming at least one semiconductor nanopillar on the semiconductor substrate and substantially perpendicular to the planar surface; covering the semiconductor nanopillar with an insulating layer; depositing a conductive layer on the insulating layer; covering a portion of the conductive layer with a masking layer; removing a conductive layer end of the conductive layer and an insulating layer end of the insulating layer, wherein the conductive layer end and the insulating layer end are not covered by the masking layer, thus exposing an uninsulated pillar end; removing the masking layer; and forming a chemical-attracting layer on the conductive layer, the chemical-attracting layer insulating the conductive layer. - View Dependent Claims (24, 25)
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Specification