×

SEMICONDUCTOR DEVICE

  • US 20120161220A1
  • Filed: 12/23/2011
  • Published: 06/28/2012
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first transistor; and

    a second transistor over the first transistor,wherein the second transistor comprises a semiconductor layer including an oxide semiconductor material,wherein the first transistor comprises a channel formation region and an impurity region provided in a semiconductor substrate including a semiconductor material other than an oxide semiconductor, and a gate electrode including an upper surface in contact with the semiconductor layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×