INTEGRATED MOSFET DEVICES WITH SCHOTTKY DIODES AND ASSOCIATED METHODS OF MANUFACTURING
First Claim
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1. A semiconductor die having a MOSFET and a Schottky diode, the semiconductor die comprising:
- a substrate;
a MOSFET area in the substrate, the MOSFET area containing an active region of the MOSFET;
a Schottky diode area in the substrate, the Schottky diode area containing an active region of the Schottky diode;
a termination area in the substrate, the termination area comprising a plurality of termination structures; and
wherein the Schottky diode area is laterally between the MOSFET area and the termination area.
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Abstract
The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.
7 Citations
15 Claims
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1. A semiconductor die having a MOSFET and a Schottky diode, the semiconductor die comprising:
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a substrate; a MOSFET area in the substrate, the MOSFET area containing an active region of the MOSFET; a Schottky diode area in the substrate, the Schottky diode area containing an active region of the Schottky diode; a termination area in the substrate, the termination area comprising a plurality of termination structures; and wherein the Schottky diode area is laterally between the MOSFET area and the termination area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device having a bottom side and an opposing top side, the semiconductor device comprising:
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a substrate proximate the bottom side of the semiconductor device, wherein the substrate is doped with a first doping type; an epitaxial layer above the substrate, wherein the epitaxial layer is doped with the first doping type; a MOSFET having a body region, a source region, a drain region, and a gate, wherein the body region and the source region are located in the epitaxial layer; a plurality of doped rings with a second doping type, wherein the plurality of doped rings are in the epitaxial layer, and wherein the doped rings surround the MOSFET; a plurality of Schottky contacts between the adjacent doped rings; and a source metal over the MOSFET and the Schottky contacts. - View Dependent Claims (10, 11, 12, 13)
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14. A method of integrating a MOSFET and a Schottky diode into a semiconductor die, comprising:
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integrating an NMOS device onto a semiconductor substrate; integrating a plurality of P-type rings onto the semiconductor substrate, wherein the plurality of P-type rings are surrounding the NMOS device; and integrating a Schottky diode onto the semiconductor substrate among the plurality of P-type rings. - View Dependent Claims (15)
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Specification