SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
First Claim
1. A semiconductor device comprising a memory circuit,wherein the memory circuit comprises:
- a first field-effect transistor, one of a source and a drain of which is configured to receive a data signal;
a second field-effect transistor, a gate of which is electrically connected to the other of the source and the drain of the first field-effect transistor; and
a third field-effect transistor, one of a source and a drain of which is electrically connected to a source or a drain of the second field-effect transistor,wherein the first field-effect transistor comprises an oxide semiconductor layer including a pair of regions with a channel formed therebetween,wherein a dopant is added to the pair of regions.
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Accused Products
Abstract
A data retention period of a memory circuit is lengthened, power consumption is reduced, and a circuit area is reduced. Further, the number of times written data can be read to one data writing operation is increased. A memory circuit has a first field-effect transistor, a second field-effect transistor, and a third field-effect transistor. A data signal is input to one of a source and a drain of the first field-effect transistor. A gate of the second field-effect transistor is electrically connected to the other of the source and the drain of the first field-effect transistor. One of a source and a drain of the third field-effect transistor is electrically connected to a source or a drain of the second field-effect transistor.
12 Citations
15 Claims
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1. A semiconductor device comprising a memory circuit,
wherein the memory circuit comprises: -
a first field-effect transistor, one of a source and a drain of which is configured to receive a data signal; a second field-effect transistor, a gate of which is electrically connected to the other of the source and the drain of the first field-effect transistor; and a third field-effect transistor, one of a source and a drain of which is electrically connected to a source or a drain of the second field-effect transistor, wherein the first field-effect transistor comprises an oxide semiconductor layer including a pair of regions with a channel formed therebetween, wherein a dopant is added to the pair of regions. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor memory device comprising:
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a plurality of memory cells arranged in i rows (i is a natural number of 2 or more) and j columns (j is a natural number); a first wiring; a second wiring; a third wiring; a fourth wiring; and a fifth wiring, wherein the memory cell comprises; a first field-effect transistor, one of a source and a drain of which is electrically connected to the first wiring, and a gate of which is electrically connected to the second wiring; a second field-effect transistor, one of a source and a drain of which is electrically connected to the third wiring, and a gate of which is electrically connected to the other of the source and the drain of the first field-effect transistor; and a third field-effect transistor, one of a source and a drain of which is electrically connected to the other of the source and the drain of the second field-effect transistor, the other of the source and the drain of which is electrically connected to the fourth wiring, and a gate of which is electrically connected to the fifth wiring, wherein the first field-effect transistor comprises an oxide semiconductor layer including a pair of regions with a channel formed therebetween, wherein a dopant is added to the pair of regions, and wherein the second field-effect transistor and the third field-effect transistor each include a semiconductor layer in which a channel is formed and which contains silicon. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor memory device comprising:
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a plurality of memory cells arranged in i rows (i is a natural number of 2 or more) and j columns (j is a natural number); a first wiring; a second wiring; a third wiring; and a fourth wiring, wherein the memory cell comprises; a first field-effect transistor, one of a source and a drain of which is electrically connected to the first wiring, and a gate of which is electrically connected to the second wiring; a second field-effect transistor, one of a source and a drain of which is electrically connected to the third wiring, and a gate of which is electrically connected to the other of the source and the drain of the first field-effect transistor; and a third field-effect transistor, one of a source and a drain of which is electrically connected to the other of the source and the drain of the second field-effect transistor, the other of the source and the drain of which is electrically connected to the first wiring, and a gate of which is electrically connected to the fourth wiring, wherein the first field-effect transistor comprises an oxide semiconductor layer including a pair of regions with a channel formed therebetween, wherein a dopant is added to the pair of regions, and wherein the second field-effect transistor and the third field-effect transistor each include a semiconductor layer in which a channel is formed and which contains silicon. - View Dependent Claims (12, 13, 14, 15)
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Specification