CYCLIC CARBOSILANE DIELECTRIC FILMS

• US 20120161295A1
• Filed: 12/23/2010
• Published: 06/28/2012
• Est. Priority Date: 12/23/2010
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Michalak, David J., Blackwell, James M., Clarke, James S.
• Granted Patent: US 8,441,006 B2
• Time in Patent Office: Days
• US Class Current: 257/632
• CPC Class Codes: C07F 7/0816 said ring comprising Si as a ring atom
• CPC Class Codes: C07F 7/1804 Compounds having Si-O-C linkages Si-O-acyl linkages C07F7/1896
• CPC Class Codes: C09D 183/14 in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms C09D183/10 takes precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/40 Organosilicon compounds, e.g. TIPS pentacene

Abstract

Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.

Claims

1. A device comprising,

a substrate,

a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, and wherein the dielectric film is hydrophobic.

2. The device of claim 1 wherein the dielectric film has a k value of from 1.6 to 2.5.

3. The device of claim 1 wherein the dielectric film comprises between 45 and 60 atomic percent C, between 25 and 35 atomic percent Si, and between 10 and 20 atomic percent O.

4. The device of claim 1 wherein the substrate additionally comprises the components of an integrated circuit device and the dielectric film is between at least two components of the integrated circuit device.

5. The device of claim 1 wherein the dielectric film additionally comprises a reacted photo acid generator, a reacted photo base generator, a reacted thermally-activated acid generator, or a reacted thermally-activated base generator.

6. The device of claim 1 wherein the dielectric film is porous and the porosity of the film is in the range of 5% and 60%.

7. The device of claim 1 wherein the dielectric film is porous and the porosity of the film is in the range of 35% and 50%.

8. The device of claim 6 or 7 wherein the pores of the dielectric film have dimensions that are between 0.25 nm and 2 nm.

9. The device of claim 6 or 7 wherein the film is chemically stable.

10. A device comprising,

a substrate,

a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, and wherein the dielectric film is porous and the porosity is in the range of 25% to 60%.

11. The device of claim 10 wherein the pores of the dielectric film have dimensions that are between 0.25 nm and 2 nm.

12. The device of claim 10 wherein the dielectric film has a k value of from 1.6 to 2.5.

13. The device of claim 10 wherein the dielectric film is porous and the porosity of the film is in the range of 35% and 50%.

14. The device of claim 10 wherein the dielectric film comprises between 45 and 60 atomic percent C, between 25 and 35 atomic percent Si, and between 10 and 20 atomic percent O.

15. The device of claim 10 wherein the substrate additionally comprises the components of an integrated circuit device and the dielectric film is between at least two components of the integrated circuit device.

16. The device of claim 10 wherein the film is chemically stable.

17. A method for making a dielectric film comprising,

providing a substrate having a surface,

depositing a mixture comprising oligomers of cyclic carbosilanes, wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, and a polymerization initiator wherein the polymerization initiator is selected from the group consisting of photo acid generators, photo base generators, thermally-activated acid generators, and thermally-activated base generators, onto the substrate surface, and

exposing the substrate to light or heat causing the photo acid generator, photo base generator, thermally-activated acid generator, or thermally-activated base generator to be activated producing and acid or a base and causing the mixture to solidify.

18. The method of claim 17 wherein the oligomers comprise between 3 and 10 cyclic carbosilane units.

19. The method of claim 17 wherein the oligomers of cyclic carbosilanes are linear oligomers.

20. The method of claim 17 wherein the oligomers of cyclic carbosilanes are branched oligomers.

21. The method of claim 17 wherein the mixture also comprises a porogen molecule that has attached carbosilanes.

22. The method of claim 17 wherein the method also includes spinning the substrate to distribute the mixture across the substrate surface before exposing the substrate to light or heat.