CONCURRENT OPERATION OF PLURAL FLASH MEMORIES

• US 20120163086A1
• Filed: 12/28/2010
• Published: 06/28/2012
• Est. Priority Date: 12/28/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Chia-Fu, Chih, Yue-Der, Yang, Tien-Chung
• Granted Patent: US 8,325,534 B2
• Time in Patent Office: Days
• US Class Current: 365/185.18
• CPC Class Codes: G11C 16/06 Auxiliary circuits, e.g. for writing into memory
• CPC Class Codes: G11C 16/30 Power supply circuits
• CPC Class Codes: G11C 2216/22 Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Abstract

A device comprises an address storage device. A first circuit includes a first flash memory, configured to sequentially receive first and second addresses and store the first address in the address storage device. The first circuit has a first set of control inputs for causing the first circuit to perform a first operation from the group consisting of read, program and erase on a cell of the first flash memory corresponding to a selected one of the first and second addresses. A second circuit includes a second flash memory, configured to receive the second address. The second circuit has a second set of control inputs for causing the second circuit to read data from a cell of the second flash memory corresponding to the second address while the first operation is being performed.

Claims

1. A device comprising:

an address storage device;

a first circuit including a first flash memory, the first circuit configured to sequentially receive first and second addresses and store the first address in the address storage device, the first circuit having a first set of control inputs for causing the first circuit to perform a first operation from the group consisting of read, program and erase on a cell of the first flash memory corresponding to a selected one of the first and second addresses;

a second circuit including a second flash memory, the second circuit configured to receive the second address, the second circuit having a second set of control inputs for causing the second circuit to read data from a cell of the second flash memory corresponding to the second address while the first operation is being performed.

2. The device of claim 1, wherein the second circuit is coupled to at least one address pin to receive the second address from outside of the device.

3. The device of claim 2, the device further comprising:

a multiplexer coupled to the at least one address input pin for receiving the second address and to the storage device for receiving the first address,

wherein the address storage device is coupled to receive the first address from the at least one address input pin, and the multiplexer is responsive to a selection control input for outputting the first address or the second address as the selected one of the first and second addresses.

4. The device of claim 1, wherein the address storage device is a latch.

5. The device of claim 1, wherein the second flash memory is configured without a charge pump, and the first circuit further comprises a charge pump that provides a high voltage signal to the first flash memory and to the second circuit.

6. The device of claim 5, further comprising a first conductive path for providing an erase voltage or a program voltage from the first circuit to the second circuit, and a second conductive path for providing a reference current from the first circuit to the second circuit.

7. The device of claim 1, wherein the first and second circuits are configured for operating concurrently on separate data streams.

8. The device of claim 1, wherein the first and second circuits are formed on a single integrated circuit chip.

9. The device of claim 1, wherein the first and second circuits are formed on respectively different integrated circuit chips within a single three dimensional integrated circuit package.

10. The device of claim 1, further comprising:

at least one address input pin, wherein the second circuit is coupled to the at least one address input pin to receive the second address from outside of the device, and the address storage device is coupled to receive the first address from the at least one address input pin; and

a multiplexer coupled to the at least one address input pin for receiving the second address and to the storage device for receiving the first address,

wherein the multiplexer is responsive to a selection control input for outputting the first address or the second address as the selected one of the first and second addresses, and

wherein the first and second circuits are formed on a single integrated circuit chip and are configured for operating concurrently on separate data streams.

11. The device of claim 10, wherein:

the second flash memory is configured without a charge pump, and the first circuit further comprises a charge pump that provides a high voltage signal to the first flash memory and to the second circuit; and

the device further comprises a first conductive path for providing an erase voltage or a program voltage from the first circuit to the second circuit, and a second conductive path for providing a reference current from the first circuit to the second circuit.

12. A device comprising:

a first circuit including a first flash memory and a charge pump that provides a high voltage signal to the first flash memory, the first circuit having a first set of control inputs for causing the first circuit to perform an erase, program or read operation to the first flash memory; and

a second circuit including a second flash memory, the second flash memory being configured without a charge pump, the second flash memory connected to use the high voltage signal from the charge pump of the first circuit, the second circuit having a second set of control inputs independent from the first set of control inputs for causing the second circuit to read from the second flash memory while the erase, program or read operation is being performed.

13. The device of claim 12, further comprising a first conductive path for providing an erase voltage or a program voltage from the first circuit to the second circuit, and a second conductive path for providing a reference current from the first circuit to the second circuit.

14. The device of claim 12, wherein:

the first and second circuits are formed on a single integrated circuit chip, and

the first and second circuits are configured for operating concurrently on separate data streams.

15. The device of claim 12, further comprising:

at least one common address input pin, wherein at least one first address of a memory cell to be accessed in the first flash memory and at least one second address of a memory cell to be accessed in the second flash memory are both received via the at least one common address input pin.

16. The device of claim 15, further comprising:

at least one storage device for receiving the first address from the at least one common address input pin and for storing the first address, and

a multiplexer coupled to the at least one common address input pin for receiving the second address and to the storage device for receiving the first address,

wherein the multiplexer is responsive to a control input for outputting the first address or the second address, and the first circuit is responsive to the output address from the multiplexer to perform the erase, program or read operation to a cell of the first flash memory corresponding to the output address.

17. A method comprising:

receiving a first address and a second address using an address input of an integrated circuit (IC) package having a first circuit contained therein, the first circuit having a first flash memory;

selecting one of the group consisting of the first address and the second address;

performing a first operation from the group consisting of read, program and erase on a cell of the first flash memory corresponding to the selected address;

providing the second address to a second circuit in the IC package having a second flash memory; and

reading a cell of the second flash memory corresponding to the second address while the first operation is being performed.

18. The method of claim 17, further comprising:

storing the first address in a storage device inside the IC package before receiving the second address,

wherein the step of selecting includes selecting the first address from the storage device or the second address from the address input.

19. The method of claim 18, wherein the selecting includes

providing the first address from the storage device to a first input of a multiplexer;

providing the second address from the address input to a second input of the multiplexer;

providing a control signal to the multiplexer; and

outputting the selected address from the multiplexer.

20. The method of claim 17, wherein:

the reading step includes applying the second address to an address input of the second flash memory while applying the first address to an address input of the first flash memory, where the second address is different from the first address, and the first address and the second address are sequentially received via the same address input of the IC package.