SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
First Claim
1. A semiconductor device comprising:
- an epitaxial substrate, formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) crystal surfaces of said group-III nitride layers are substantially parallel to a substrate surface; and
a Schottky electrode, whereinsaid epitaxial substrate comprises;
a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>
0);
a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>
0, y2>
0); and
a contact layer formed of a third group-III nitride being AlN and having insularity and adjacent to said barrier layer,a film thickness of said contact layer is 0.5 nm to 6 nm, andsaid Schottky electrode is connected to said contact layer.
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Abstract
A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.
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Citations
28 Claims
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1. A semiconductor device comprising:
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an epitaxial substrate, formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) crystal surfaces of said group-III nitride layers are substantially parallel to a substrate surface; and a Schottky electrode, wherein said epitaxial substrate comprises; a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>
0);a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>
0, y2>
0); anda contact layer formed of a third group-III nitride being AlN and having insularity and adjacent to said barrier layer, a film thickness of said contact layer is 0.5 nm to 6 nm, and said Schottky electrode is connected to said contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device comprising an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) crystal surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, said method comprising:
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a channel layer forming step of forming a channel layer with a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>
0), on the base substrate;a barrier layer forming step of forming a barrier layer with a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>
0, y2>
0), on said channel layer;a contact layer forming step of forming a contact layer with a third group-III nitride being AlN and having insularity in a film thickness of 0.5 nm to 6 nm so as to be adjacent to said barrier layer; and a Schottky electrode forming step of forming the Schottky electrode so as to be connected to said contact layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification