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SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

  • US 20120168771A1
  • Filed: 03/08/2012
  • Published: 07/05/2012
  • Est. Priority Date: 07/29/2010
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an epitaxial substrate, formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) crystal surfaces of said group-III nitride layers are substantially parallel to a substrate surface; and

    a Schottky electrode, whereinsaid epitaxial substrate comprises;

    a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>

    0);

    a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>

    0, y2>

    0); and

    a contact layer formed of a third group-III nitride being AlN and having insularity and adjacent to said barrier layer,a film thickness of said contact layer is 0.5 nm to 6 nm, andsaid Schottky electrode is connected to said contact layer.

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