Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink
First Claim
1. An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
- a) a MOSFET having a floating body, wherein the MOSFET is biased to selectively operate in the accumulated charge regime, and wherein accumulated charge is present in the floating body when the MOSFET is biased to operate in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS;
wherein the MOSFET includes a gate, drain, source, and a gate oxide layer positioned between the gate and the body, and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state), and wherein charge accumulates within the body in a region proximate the gate oxide;
wherein the MOSFET body includes a channel region including a gate modulated conductive channel between the source and the drain, and wherein the source, drain and channel have carriers of identical polarity when the MOSFET is biased to operate in an on-state (conducting state), and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in the off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain and channel carriers.
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Accused Products
Abstract
A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.
72 Citations
1 Claim
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1. An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
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a) a MOSFET having a floating body, wherein the MOSFET is biased to selectively operate in the accumulated charge regime, and wherein accumulated charge is present in the floating body when the MOSFET is biased to operate in the accumulated charge regime; and b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS; wherein the MOSFET includes a gate, drain, source, and a gate oxide layer positioned between the gate and the body, and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state), and wherein charge accumulates within the body in a region proximate the gate oxide; wherein the MOSFET body includes a channel region including a gate modulated conductive channel between the source and the drain, and wherein the source, drain and channel have carriers of identical polarity when the MOSFET is biased to operate in an on-state (conducting state), and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in the off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain and channel carriers.
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Specification